Nonactivated transport of strongly interacting two-dimensional holes in GaAs

Jian Huang, D. S. Novikov, D. C. Tsui, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

We report on the transport measurements of two-dimensional holes in GaAs field-effect transistors with record low densities down to 7× 108 cm-2. Remarkably, such a dilute system (with Fermi wavelength approaching 1 μm) exhibits a nonactivated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly interacting regime.

Original languageEnglish (US)
Article number201302
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number20
DOIs
StatePublished - 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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