Abstract
We report on the transport measurements of two-dimensional holes in GaAs field-effect transistors with record low densities down to 7× 108 cm-2. Remarkably, such a dilute system (with Fermi wavelength approaching 1 μm) exhibits a nonactivated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly interacting regime.
Original language | English (US) |
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Article number | 201302 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 74 |
Issue number | 20 |
DOIs | |
State | Published - 2006 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics