Abstract
We report on the photoluminescence and its excitation spectra of mixed type I - type II GaAs/AlAs quantum wells (MTQW) under applied magnetic fields. These structures consist of alternating narrow and wide wells and are designed so that the electron density in the wide well can be optically controlled. A transition from excitonic to free carrier recombination is observed as the electron density is increased.
Original language | English (US) |
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Pages (from-to) | 175-178 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 15 |
Issue number | 2 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering