Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications

Engineering

• Transmissions 100%
• Rapid Thermal Processing 100%
• Elevated Temperature 50%
• Temperature Range 50%
• Edge Region 50%
• Band Edge 50%
• Silicon Wafer 50%
• Optical Transmission 50%
• Carrier Concentration 50%

Material Science

• Silicon 100%
• Carrier Concentration 33%
• Film Growth 33%
• Silicon Wafer 33%
• Germanium 33%
• Epitaxy 33%

Keyphrases

• Free Carrier Concentration 50%
• Germanium Film 50%
• Band-to-band Absorption 50%