Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications

J. C. Sturm; P. V. Schwartz; P. M. Garone

doi:10.1109/VLSIT.1990.111031

Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications

J. C. Sturm, P. V. Schwartz, P. M. Garone

Research output: Contribution to journal › Conference article › peer-review

Abstract

A method for the noninvasive measurement of silicon wafer temperature based on infrared transmission is presented. The method is well suited to the 400-800°C temperature range, can be used through thick quartz walls, and is compatible with rapid thermal processing and epitaxial growth. The approach relies on the decreased bandgap, higher phonon population, and increased free carrier concentrations in silicon at elevated temperatures. These effects cause increased optical absorption in the infrared (near band-edge) region due to both increased band-to-band and intraband absorption. By measuring the infrared optical transmission of the wafer in situ during processing, an intimate measure of the wafer temperature can be attained. Improved control of silicon-germanium film growth has been demonstrated.

Original language	English (US)
Article number	5727491
Pages (from-to)	107-108
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
DOIs	https://doi.org/10.1109/VLSIT.1990.111031
State	Published - 1990
Event	1990 Symposium on VLSI Technology - Honolulu, HI, United States Duration: Jun 4 1990 → Jun 7 1990

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.1990.111031

Cite this

@article{41b0eec35a8f4196baf203f52ac1d46e,

title = "Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications",

abstract = "A method for the noninvasive measurement of silicon wafer temperature based on infrared transmission is presented. The method is well suited to the 400-800°C temperature range, can be used through thick quartz walls, and is compatible with rapid thermal processing and epitaxial growth. The approach relies on the decreased bandgap, higher phonon population, and increased free carrier concentrations in silicon at elevated temperatures. These effects cause increased optical absorption in the infrared (near band-edge) region due to both increased band-to-band and intraband absorption. By measuring the infrared optical transmission of the wafer in situ during processing, an intimate measure of the wafer temperature can be attained. Improved control of silicon-germanium film growth has been demonstrated.",

author = "Sturm, {J. C.} and Schwartz, {P. V.} and Garone, {P. M.}",

year = "1990",

doi = "10.1109/VLSIT.1990.111031",

language = "English (US)",

pages = "107--108",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1990 Symposium on VLSI Technology ; Conference date: 04-06-1990 Through 07-06-1990",

}

TY - JOUR

T1 - Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Garone, P. M.

PY - 1990

Y1 - 1990

N2 - A method for the noninvasive measurement of silicon wafer temperature based on infrared transmission is presented. The method is well suited to the 400-800°C temperature range, can be used through thick quartz walls, and is compatible with rapid thermal processing and epitaxial growth. The approach relies on the decreased bandgap, higher phonon population, and increased free carrier concentrations in silicon at elevated temperatures. These effects cause increased optical absorption in the infrared (near band-edge) region due to both increased band-to-band and intraband absorption. By measuring the infrared optical transmission of the wafer in situ during processing, an intimate measure of the wafer temperature can be attained. Improved control of silicon-germanium film growth has been demonstrated.

AB - A method for the noninvasive measurement of silicon wafer temperature based on infrared transmission is presented. The method is well suited to the 400-800°C temperature range, can be used through thick quartz walls, and is compatible with rapid thermal processing and epitaxial growth. The approach relies on the decreased bandgap, higher phonon population, and increased free carrier concentrations in silicon at elevated temperatures. These effects cause increased optical absorption in the infrared (near band-edge) region due to both increased band-to-band and intraband absorption. By measuring the infrared optical transmission of the wafer in situ during processing, an intimate measure of the wafer temperature can be attained. Improved control of silicon-germanium film growth has been demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=0025592316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025592316&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.1990.111031

DO - 10.1109/VLSIT.1990.111031

M3 - Conference article

AN - SCOPUS:0025592316

SN - 0743-1562

SP - 107

EP - 108

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 5727491

T2 - 1990 Symposium on VLSI Technology

Y2 - 4 June 1990 through 7 June 1990

ER -

Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this