Abstract
The first non-cascaded intersubband injection lasers based on a single active region is analyzed. The laser structure is grown in the InGaAs/AlInAs on InP material system using MBE. The active region is embedded between an electron injector and a Bragg reflector region.
Original language | English (US) |
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Pages | 3-4 |
Number of pages | 2 |
State | Published - 1999 |
Externally published | Yes |
Event | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: May 23 1999 → May 28 1999 |
Other
Other | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
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City | Baltimore, MD, USA |
Period | 5/23/99 → 5/28/99 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy