NiN-Passivated NiO Hole-Transport Layer Improves Halide Perovskite-Based Solar Cell

Anat Itzhak, Xu He, Adi Kama, Sujit Kumar, Michal Ejgenberg, Antoine Kahn, David Cahen

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


The interfaces between inorganic selective contacts and halide perovskites (HaPs) are possibly the greatest challenge for making stable and reproducible solar cells with these materials. NiOx, an attractive hole-transport layer as it fits the electronic structure of HaPs, is highly stable and can be produced at a low cost. Furthermore, NiOxcan be fabricated via scalable and controlled physical deposition methods such as RF sputtering to facilitate the quest for scalable, solvent-free, vacuum-deposited HaP-based solar cells (PSCs). However, the interface between NiOxand HaPs is still not well-controlled, which leads at times to a lack of stability and Voclosses. Here, we use RF sputtering to fabricate NiOxand then cover it with a NiyN layer without breaking vacuum. The NiyN layer protects NiOxdoubly during PSC production. Firstly, the NiyN layer protects NiOxfrom Ni3+species being reduced to Ni2+by Ar plasma, thus maintaining NiOxconductivity. Secondly, it passivates the interface between NiOxand the HaPs, retaining PSC stability over time. This double effect improves PSC efficiency from an average of 16.5% with a 17.4% record cell to a 19% average with a 19.8% record cell and increases the device stability.

Original languageEnglish (US)
Pages (from-to)47587-47594
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number42
StatePublished - Oct 26 2022

All Science Journal Classification (ASJC) codes

  • General Materials Science


  • halide perovskites
  • interface
  • nickel nitride
  • nickel oxide
  • passivation
  • solar cells


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