NiN-Passivated NiO Hole-Transport Layer Improves Halide Perovskite-Based Solar Cell

Anat Itzhak, Xu He, Adi Kama, Sujit Kumar, Michal Ejgenberg, Antoine Kahn, David Cahen

Research output: Contribution to journalArticlepeer-review


The interfaces between inorganic selective contacts and halide perovskites (HaPs) are possibly the greatest challenge for making stable and reproducible solar cells with these materials. NiOx, an attractive hole-transport layer as it fits the electronic structure of HaPs, is highly stable and can be produced at a low cost. Furthermore, NiOxcan be fabricated via scalable and controlled physical deposition methods such as RF sputtering to facilitate the quest for scalable, solvent-free, vacuum-deposited HaP-based solar cells (PSCs). However, the interface between NiOxand HaPs is still not well-controlled, which leads at times to a lack of stability and Voclosses. Here, we use RF sputtering to fabricate NiOxand then cover it with a NiyN layer without breaking vacuum. The NiyN layer protects NiOxdoubly during PSC production. Firstly, the NiyN layer protects NiOxfrom Ni3+species being reduced to Ni2+by Ar plasma, thus maintaining NiOxconductivity. Secondly, it passivates the interface between NiOxand the HaPs, retaining PSC stability over time. This double effect improves PSC efficiency from an average of 16.5% with a 17.4% record cell to a 19% average with a 19.8% record cell and increases the device stability.

Original languageEnglish (US)
Pages (from-to)47587-47594
Number of pages8
JournalACS Applied Materials and Interfaces
Issue number42
StatePublished - Oct 26 2022

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


  • halide perovskites
  • interface
  • nickel nitride
  • nickel oxide
  • passivation
  • solar cells


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