New spin-valve magnetic memory cell based on patterned single-domain magnetic multilayer NiFe/Cu/Co

L. Kong, Q. Pan, M. Li, B. Cui, S. Y. Chou

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

A new spin-valve magnetic memory cell based on patterned single-domain magnetic multilayer NiFe/Cu/Co is demonstrated. In this memory cell, the magnetization of one magnetic layer is fixed through the spontaneous formation of single-domain due to nanopattern. The memory cell has smaller resistance when the magnetization of the magnetic soft and hard layers are aligned in the same direction, and a larger resistance when the two layers pointed in the opposite direction.

Original languageEnglish (US)
Pages50-51
Number of pages2
StatePublished - 1998
EventProceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA
Duration: Jun 22 1998Jun 24 1998

Other

OtherProceedings of the 1998 56th Annual Device Research Conference
CityCharlottesville, VA, USA
Period6/22/986/24/98

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kong, L., Pan, Q., Li, M., Cui, B., & Chou, S. Y. (1998). New spin-valve magnetic memory cell based on patterned single-domain magnetic multilayer NiFe/Cu/Co. 50-51. Paper presented at Proceedings of the 1998 56th Annual Device Research Conference, Charlottesville, VA, USA, .