Abstract
A new spin-valve magnetic memory cell based on patterned single-domain magnetic multilayer NiFe/Cu/Co is demonstrated. In this memory cell, the magnetization of one magnetic layer is fixed through the spontaneous formation of single-domain due to nanopattern. The memory cell has smaller resistance when the magnetization of the magnetic soft and hard layers are aligned in the same direction, and a larger resistance when the two layers pointed in the opposite direction.
| Original language | English (US) |
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| Pages | 50-51 |
| Number of pages | 2 |
| State | Published - 1998 |
| Event | Proceedings of the 1998 56th Annual Device Research Conference - Charlottesville, VA, USA Duration: Jun 22 1998 → Jun 24 1998 |
Other
| Other | Proceedings of the 1998 56th Annual Device Research Conference |
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| City | Charlottesville, VA, USA |
| Period | 6/22/98 → 6/24/98 |
All Science Journal Classification (ASJC) codes
- General Engineering