New single electron transistor

Stephen Y. Chou, Yun Wang

Research output: Contribution to conferencePaper

Abstract

We propose and demonstrate a new single electron transistor with a nanoscale single barrier placed inside the gap of a conventional split-gate FET. At low temperatures, as the gate voltage was scanned, reproducible periodic oscillations of drain conductance were observed before the onset of the first 2e2/h conductance plateau. The shape of the oscillation peak can be well fitted by the derivative of the Fermi-Dirac distribution. It was found experimentally that each conductance oscillation corresponds to the Coulomb blockade of a single electron in the one-dimensional channel. A model that describes the operation of the new single electron transistor is suggested.

Original languageEnglish (US)
Pages738-740
Number of pages3
StatePublished - Dec 1 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'New single electron transistor'. Together they form a unique fingerprint.

  • Cite this

    Chou, S. Y., & Wang, Y. (1992). New single electron transistor. 738-740. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .