New resonant tunneling transistor fabricated by cleaved edge overgrowth

C. Kurdak, D. C. Tsui, S. Parihar, H. Manoharan, Stephen Aplin Lyon, Mansour Shayegan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Editors Anon
PublisherPubl by IEEE
Pages265-269
Number of pages5
ISBN (Print)0780308948
StatePublished - Dec 1 1993

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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  • Cite this

    Kurdak, C., Tsui, D. C., Parihar, S., Manoharan, H., Lyon, S. A., & Shayegan, M. (1993). New resonant tunneling transistor fabricated by cleaved edge overgrowth. In Anon (Ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 265-269). Publ by IEEE.