New resonant tunneling transistor fabricated by cleaved edge overgrowth

C. Kurdak; D. C. Tsui; S. Parihar; H. Manoharan; S. A. Lyon; M. Shayegan

New resonant tunneling transistor fabricated by cleaved edge overgrowth

C. Kurdak, D. C. Tsui, S. Parihar, H. Manoharan, S. A. Lyon, M. Shayegan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.

Original language	English (US)
Title of host publication	Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Editors	Anon
Publisher	Publ by IEEE
Pages	265-269
Number of pages	5
ISBN (Print)	0780308948
State	Published - 1993

Publication series

Name	Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Kurdak, C., Tsui, D. C., Parihar, S., Manoharan, H., Lyon, S. A., & Shayegan, M. (1993). New resonant tunneling transistor fabricated by cleaved edge overgrowth. In Anon (Ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (pp. 265-269). (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits). Publ by IEEE.

Kurdak, C. ; Tsui, D. C. ; Parihar, S. et al. / New resonant tunneling transistor fabricated by cleaved edge overgrowth. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. editor / Anon. Publ by IEEE, 1993. pp. 265-269 (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

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title = "New resonant tunneling transistor fabricated by cleaved edge overgrowth",

abstract = "A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.",

author = "C. Kurdak and Tsui, {D. C.} and S. Parihar and H. Manoharan and Lyon, {S. A.} and M. Shayegan",

year = "1993",

language = "English (US)",

isbn = "0780308948",

series = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",

publisher = "Publ by IEEE",

pages = "265--269",

editor = "Anon",

booktitle = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",

}

Kurdak, C, Tsui, DC, Parihar, S, Manoharan, H, Lyon, SA & Shayegan, M 1993, New resonant tunneling transistor fabricated by cleaved edge overgrowth. in Anon (ed.), Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Publ by IEEE, pp. 265-269.

New resonant tunneling transistor fabricated by cleaved edge overgrowth. / Kurdak, C.; Tsui, D. C.; Parihar, S. et al.
Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. ed. / Anon. Publ by IEEE, 1993. p. 265-269 (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - New resonant tunneling transistor fabricated by cleaved edge overgrowth

AU - Kurdak, C.

AU - Tsui, D. C.

AU - Parihar, S.

AU - Manoharan, H.

AU - Lyon, S. A.

AU - Shayegan, M.

PY - 1993

Y1 - 1993

N2 - A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.

AB - A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.

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AN - SCOPUS:0027851962

SN - 0780308948

T3 - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

SP - 265

EP - 269

BT - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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PB - Publ by IEEE

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Kurdak C, Tsui DC, Parihar S, Manoharan H, Lyon SA , Shayegan M. New resonant tunneling transistor fabricated by cleaved edge overgrowth. In Anon, editor, Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. Publ by IEEE. 1993. p. 265-269. (Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits).

New resonant tunneling transistor fabricated by cleaved edge overgrowth

Abstract

Publication series

All Science Journal Classification (ASJC) codes

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