A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.
|Original language||English (US)|
|Title of host publication||Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits|
|Publisher||Publ by IEEE|
|Number of pages||5|
|State||Published - Dec 1 1993|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering