New resonant tunneling transistor fabricated by cleaved edge overgrowth

C. Kurdak; D. C. Tsui; S. Parihar; H. Manoharan; Stephen Aplin Lyon; Mansour Shayegan

New resonant tunneling transistor fabricated by cleaved edge overgrowth

C. Kurdak, D. C. Tsui, S. Parihar, H. Manoharan, Stephen Aplin Lyon, Mansour Shayegan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.

Original language	English (US)
Title of host publication	Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Editors	Anon
Publisher	Publ by IEEE
Pages	265-269
Number of pages	5
ISBN (Print)	0780308948
State	Published - Dec 1 1993

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

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title = "New resonant tunneling transistor fabricated by cleaved edge overgrowth",

abstract = "A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.",

author = "C. Kurdak and Tsui, {D. C.} and S. Parihar and H. Manoharan and Lyon, {Stephen Aplin} and Mansour Shayegan",

year = "1993",

month = dec,

day = "1",

language = "English (US)",

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pages = "265--269",

editor = "Anon",

booktitle = "Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits",

publisher = "Publ by IEEE",

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T1 - New resonant tunneling transistor fabricated by cleaved edge overgrowth

AU - Kurdak, C.

AU - Tsui, D. C.

AU - Parihar, S.

AU - Manoharan, H.

AU - Lyon, Stephen Aplin

AU - Shayegan, Mansour

PY - 1993/12/1

Y1 - 1993/12/1

N2 - A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.

AB - A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.

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UR - http://www.scopus.com/inward/citedby.url?scp=0027851962&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027851962

SN - 0780308948

SP - 265

EP - 269

BT - Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

A2 - Anon, null

PB - Publ by IEEE

ER -

New resonant tunneling transistor fabricated by cleaved edge overgrowth

Abstract

All Science Journal Classification (ASJC) codes

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