Abstract
A new three-terminal resonant tunneling transistor is realized by the molecular beam epitaxial cleaved edge overgrowth technique in GaAs/AlGaAs system. In addition to negative differential resistance, this device exhibits both positive and negative transconductance behavior which can find useful applications in high speed logic circuits.
Original language | English (US) |
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Title of host publication | Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits |
Editors | Anon |
Publisher | Publ by IEEE |
Pages | 265-269 |
Number of pages | 5 |
ISBN (Print) | 0780308948 |
State | Published - Dec 1 1993 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering