New frontiers in quantum cascade lasers and applications

  • Federico Capasso
  • , Claire Gmachl
  • , Roberto Paiella
  • , Alessandro Tredicucci
  • , Albert L. Hutchinson
  • , Deborah L. Sivco
  • , James N. Baillargeon
  • , Alfred Y. Cho
  • , H. C. Liu

Research output: Contribution to journalArticlepeer-review

Abstract

Recent advances and new directions in quantum cascade (QC) lasers are discussed in this paper. Invented in 1994 following many years of research on band-structure engineered semiconductors and devices grown by molecular beam epitaxy, this fundamentally new laser has rapidly advanced to a leading position among midinfrared semiconductor lasers in terms of wavelength agility as well as power and temperature performance. Because of the cascaded structure, QC lasers have a slope efficiency proportional to the number of stages. Devices with 100 stages having a record peak power of 0.6 W at room temperature are reported here. QC lasers in the AlInAs-GaInAs lattice matched to InP material system can now be designed to emit in the whole midinfrared range from 4 to 20 μm by appropriately choosing the thickness of the quantum wells in the active region. Using strained AlInAs-GaInAs, wavelengths as short as 3.4 μm have been produced. New results on QC lasers emitting at 19 urn, the longest ever realized in a III-V semiconductor laser, are reported. These devices use innovative plasmon waveguides to greatly enhance the mode confinement factor, thereby reducing the thickness of the epitaxial material. By use of a distributed feedback (DFB) geometry, QC lasers show single-mode emission with a 30-dB side-mode suppression ratio. Broad continuous single-mode tuning by either temperature or current has been demonstrated in these DFB QC lasers at wavelengths in two atmospheric windows (3-5 and 8-13 pm), with continuous-wave linewidths <1 MHz when freerunning and ∼10 KHz with suitable locking to the side of a molecular transition. These devices have been used in a number of chemical sensing and spectroscopic applications, demonstrating the capability of detecting parts per billion in volume of several trace gases. Sophisticated band-structure engineering has allowed the design and demonstration of bidirectional lasers. These devices emit different wavelengths for opposite bias polarities. The last section of the paper deals with the high-speed operation of QC lasers. Gain switching with pulse widths ∼50 ps and active modelocking with a few picosecond-long pulses have been demonstrated. Finally, a new type of passive modelocking has been demonstrated in QC lasers, which relies on the giant and ultrafast optical Kerr effect of intersubband transitions.

Original languageEnglish (US)
Pages (from-to)931-946
Number of pages16
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume6
Issue number6
DOIs
StatePublished - 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • Chemical sensing
  • High-speed optoelectronic devices
  • Injection lasers
  • Intersubband transitions
  • Mid-infrared
  • Semiconductor heterostructures
  • Unipolar semiconductor lasers

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