New designer dielectric metamaterial with isotropic photonic band gap

Geev Nahal, Weining Man, Marian Florescu, Paul Joseph Steinhardt, Salvatore Torquato, Paul M. Chaikin, Ruth Ann Mullen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new designer dielectric metamaterial featuring an isotropic photonic bandgap at 1550 nm wavelength designed as a finite thickness, 220 nm thick 2d slab, is fabricated in a CMOS-compatible silicon-on-insulator process. This 'hyperuniform disordered solid' (HUDS) is neither crystalline nor quasicrystalline.

Original languageEnglish (US)
Title of host publication2013 IEEE Photonics Conference, IPC 2013
Pages480-482
Number of pages3
DOIs
StatePublished - Dec 1 2013
Event2013 26th IEEE Photonics Conference, IPC 2013 - Bellevue, WA, United States
Duration: Sep 8 2013Sep 12 2013

Publication series

Name2013 IEEE Photonics Conference, IPC 2013

Other

Other2013 26th IEEE Photonics Conference, IPC 2013
CountryUnited States
CityBellevue, WA
Period9/8/139/12/13

All Science Journal Classification (ASJC) codes

  • Instrumentation

Keywords

  • HUDS
  • hyperuniform disordered solid
  • hyperuniform disordered structure
  • metamaterial
  • photonic band gap
  • siliconon-insulator

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  • Cite this

    Nahal, G., Man, W., Florescu, M., Steinhardt, P. J., Torquato, S., Chaikin, P. M., & Mullen, R. A. (2013). New designer dielectric metamaterial with isotropic photonic band gap. In 2013 IEEE Photonics Conference, IPC 2013 (pp. 480-482). [6656646] (2013 IEEE Photonics Conference, IPC 2013). https://doi.org/10.1109/IPCon.2013.6656646