Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control

Zi Huai Zhang, Josh A. Zuber, Lila V.H. Rodgers, Xin Gui, Paul Stevenson, Minghao Li, Marietta Batzer, Marcel Li Grimau Puigibert, Brendan J. Shields, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Robert J. Cava, Patrick Maletinsky, Nathalie P. De Leon

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum applications; however, stabilizing SiV0 requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.

Original languageEnglish (US)
Article number166902
JournalPhysical review letters
Issue number16
StatePublished - Apr 21 2023

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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