Neutral Silicon-Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Zi Huai Zhang, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Nathalie P. De Leon

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Neutral silicon-vacancy (Si-V0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of Si-V0 centers requires careful Fermi-level engineering of the diamond host material, making further technological development challenging. Here, we show that Si-V0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting Si-V0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of Si-V0 centers as well as other emerging quantum defects in diamond.

Original languageEnglish (US)
Article number034022
JournalPhysical Review Applied
Issue number3
StatePublished - Mar 2023
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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