Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

C. I. Wu, A. Kahn

Research output: Contribution to journalConference article

60 Scopus citations

Abstract

The electronic structure of GaN and AlN (0001) surfaces and modification by cesium (Cs) adsorption are investigated via ultra-violet and X-ray photoemission spectroscopy (UPS, XPS) and total yield spectroscopy. The electron affinity (EA) of the clean and ordered 1×1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption (with the help of oxygen pre-treatment in the case of GaN) reduces EA on both surfaces by about 2.6-2.8 eV, leading to true negative electron affinity (NEA) in the case of AlN and effective NEA in the case of GaN. Total yield spectroscopy confirms NEA on both surfaces.

Original languageEnglish (US)
Pages (from-to)250-255
Number of pages6
JournalApplied Surface Science
Volume162
DOIs
StatePublished - Aug 1 2000
Event5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
Duration: Jul 6 1999Jul 9 1999

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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