Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

C. I. Wu; A. Kahn

doi:10.1016/S0169-4332(00)00200-2

Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

C. I. Wu, A. Kahn

Research output: Contribution to journal › Conference article › peer-review

82 Scopus citations

Abstract

The electronic structure of GaN and AlN (0001) surfaces and modification by cesium (Cs) adsorption are investigated via ultra-violet and X-ray photoemission spectroscopy (UPS, XPS) and total yield spectroscopy. The electron affinity (EA) of the clean and ordered 1×1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption (with the help of oxygen pre-treatment in the case of GaN) reduces EA on both surfaces by about 2.6-2.8 eV, leading to true negative electron affinity (NEA) in the case of AlN and effective NEA in the case of GaN. Total yield spectroscopy confirms NEA on both surfaces.

Original language	English (US)
Pages (from-to)	250-255
Number of pages	6
Journal	Applied Surface Science
Volume	162
DOIs	https://doi.org/10.1016/S0169-4332(00)00200-2
State	Published - Aug 1 2000
Event	5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France Duration: Jul 6 1999 → Jul 9 1999

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(00)00200-2

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title = "Negative electron affinity and electron emission at cesiated GaN and AlN surfaces",

abstract = "The electronic structure of GaN and AlN (0001) surfaces and modification by cesium (Cs) adsorption are investigated via ultra-violet and X-ray photoemission spectroscopy (UPS, XPS) and total yield spectroscopy. The electron affinity (EA) of the clean and ordered 1×1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption (with the help of oxygen pre-treatment in the case of GaN) reduces EA on both surfaces by about 2.6-2.8 eV, leading to true negative electron affinity (NEA) in the case of AlN and effective NEA in the case of GaN. Total yield spectroscopy confirms NEA on both surfaces.",

author = "Wu, {C. I.} and A. Kahn",

note = "Funding Information: Support of this work by the National Science Foundation (DMR96-18771) is gratefully acknowledged. The authors also thank Drs. E.S. Hellman and D.N.E. Buchanan for providing AlN, Dr. I. Ferguson for GaN samples, and Prof. P. Soukiassian for useful advice on Cs experiments.; 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) ; Conference date: 06-07-1999 Through 09-07-1999",

year = "2000",

month = aug,

day = "1",

doi = "10.1016/S0169-4332(00)00200-2",

language = "English (US)",

volume = "162",

pages = "250--255",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

AU - Wu, C. I.

AU - Kahn, A.

N1 - Funding Information: Support of this work by the National Science Foundation (DMR96-18771) is gratefully acknowledged. The authors also thank Drs. E.S. Hellman and D.N.E. Buchanan for providing AlN, Dr. I. Ferguson for GaN samples, and Prof. P. Soukiassian for useful advice on Cs experiments.

PY - 2000/8/1

Y1 - 2000/8/1

N2 - The electronic structure of GaN and AlN (0001) surfaces and modification by cesium (Cs) adsorption are investigated via ultra-violet and X-ray photoemission spectroscopy (UPS, XPS) and total yield spectroscopy. The electron affinity (EA) of the clean and ordered 1×1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption (with the help of oxygen pre-treatment in the case of GaN) reduces EA on both surfaces by about 2.6-2.8 eV, leading to true negative electron affinity (NEA) in the case of AlN and effective NEA in the case of GaN. Total yield spectroscopy confirms NEA on both surfaces.

AB - The electronic structure of GaN and AlN (0001) surfaces and modification by cesium (Cs) adsorption are investigated via ultra-violet and X-ray photoemission spectroscopy (UPS, XPS) and total yield spectroscopy. The electron affinity (EA) of the clean and ordered 1×1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption (with the help of oxygen pre-treatment in the case of GaN) reduces EA on both surfaces by about 2.6-2.8 eV, leading to true negative electron affinity (NEA) in the case of AlN and effective NEA in the case of GaN. Total yield spectroscopy confirms NEA on both surfaces.

UR - http://www.scopus.com/inward/record.url?scp=0034250369&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034250369&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(00)00200-2

DO - 10.1016/S0169-4332(00)00200-2

M3 - Conference article

AN - SCOPUS:0034250369

SN - 0169-4332

VL - 162

SP - 250

EP - 255

JO - Applied Surface Science

JF - Applied Surface Science

T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)

Y2 - 6 July 1999 through 9 July 1999

ER -

Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

Abstract

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