TY - JOUR
T1 - Negative electron affinity and electron emission at cesiated GaN and AlN surfaces
AU - Wu, C. I.
AU - Kahn, A.
N1 - Funding Information:
Support of this work by the National Science Foundation (DMR96-18771) is gratefully acknowledged. The authors also thank Drs. E.S. Hellman and D.N.E. Buchanan for providing AlN, Dr. I. Ferguson for GaN samples, and Prof. P. Soukiassian for useful advice on Cs experiments.
PY - 2000/8/1
Y1 - 2000/8/1
N2 - The electronic structure of GaN and AlN (0001) surfaces and modification by cesium (Cs) adsorption are investigated via ultra-violet and X-ray photoemission spectroscopy (UPS, XPS) and total yield spectroscopy. The electron affinity (EA) of the clean and ordered 1×1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption (with the help of oxygen pre-treatment in the case of GaN) reduces EA on both surfaces by about 2.6-2.8 eV, leading to true negative electron affinity (NEA) in the case of AlN and effective NEA in the case of GaN. Total yield spectroscopy confirms NEA on both surfaces.
AB - The electronic structure of GaN and AlN (0001) surfaces and modification by cesium (Cs) adsorption are investigated via ultra-violet and X-ray photoemission spectroscopy (UPS, XPS) and total yield spectroscopy. The electron affinity (EA) of the clean and ordered 1×1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption (with the help of oxygen pre-treatment in the case of GaN) reduces EA on both surfaces by about 2.6-2.8 eV, leading to true negative electron affinity (NEA) in the case of AlN and effective NEA in the case of GaN. Total yield spectroscopy confirms NEA on both surfaces.
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U2 - 10.1016/S0169-4332(00)00200-2
DO - 10.1016/S0169-4332(00)00200-2
M3 - Conference article
AN - SCOPUS:0034250369
SN - 0169-4332
VL - 162
SP - 250
EP - 255
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5)
Y2 - 6 July 1999 through 9 July 1999
ER -