Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond

Alastair Stacey; David A. Simpson; Timothy J. Karle; Brant C. Gibson; Victor M. Acosta; Zhihong Huang; Kai Mei C. Fu; Charles Santori; Raymond G. Beausoleil; Liam P. McGuinness; Kumaravelu Ganesan; Snjezana Tomljenovic-Hanic; Andrew D. Greentree; Steven Prawer

doi:10.1002/adma.201201074

Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond

Alastair Stacey, David A. Simpson, Timothy J. Karle, Brant C. Gibson, Victor M. Acosta, Zhihong Huang, Kai Mei C. Fu, Charles Santori, Raymond G. Beausoleil, Liam P. McGuinness, Kumaravelu Ganesan, Snjezana Tomljenovic-Hanic, Andrew D. Greentree, Steven Prawer

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.

Original language	English (US)
Pages (from-to)	3333-3338
Number of pages	6
Journal	Advanced Materials
Volume	24
Issue number	25
DOIs	https://doi.org/10.1002/adma.201201074
State	Published - Jul 3 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

Keywords

chemical vapour deposition
diamond
nitrogen-vacancy
photo-luminescence excitation
quantum information processing

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10.1002/adma.201201074

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Stacey, A., Simpson, D. A., Karle, T. J., Gibson, B. C., Acosta, V. M., Huang, Z., Fu, K. M. C., Santori, C., Beausoleil, R. G., McGuinness, L. P., Ganesan, K., Tomljenovic-Hanic, S., Greentree, A. D., & Prawer, S. (2012). Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond. Advanced Materials, 24(25), 3333-3338. https://doi.org/10.1002/adma.201201074

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title = "Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond",

abstract = "A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.",

keywords = "chemical vapour deposition, diamond, nitrogen-vacancy, photo-luminescence excitation, quantum information processing",

author = "Alastair Stacey and Simpson, \{David A.\} and Karle, \{Timothy J.\} and Gibson, \{Brant C.\} and Acosta, \{Victor M.\} and Zhihong Huang and Fu, \{Kai Mei C.\} and Charles Santori and Beausoleil, \{Raymond G.\} and McGuinness, \{Liam P.\} and Kumaravelu Ganesan and Snjezana Tomljenovic-Hanic and Greentree, \{Andrew D.\} and Steven Prawer",

year = "2012",

month = jul,

day = "3",

doi = "10.1002/adma.201201074",

language = "English (US)",

volume = "24",

pages = "3333--3338",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "25",

}

Stacey, A, Simpson, DA, Karle, TJ, Gibson, BC, Acosta, VM, Huang, Z, Fu, KMC, Santori, C, Beausoleil, RG, McGuinness, LP, Ganesan, K, Tomljenovic-Hanic, S, Greentree, AD & Prawer, S 2012, 'Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond', Advanced Materials, vol. 24, no. 25, pp. 3333-3338. https://doi.org/10.1002/adma.201201074

TY - JOUR

T1 - Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond

AU - Stacey, Alastair

AU - Simpson, David A.

AU - Karle, Timothy J.

AU - Gibson, Brant C.

AU - Acosta, Victor M.

AU - Huang, Zhihong

AU - Fu, Kai Mei C.

AU - Santori, Charles

AU - Beausoleil, Raymond G.

AU - McGuinness, Liam P.

AU - Ganesan, Kumaravelu

AU - Tomljenovic-Hanic, Snjezana

AU - Greentree, Andrew D.

AU - Prawer, Steven

PY - 2012/7/3

Y1 - 2012/7/3

N2 - A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.

AB - A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.

KW - chemical vapour deposition

KW - diamond

KW - nitrogen-vacancy

KW - photo-luminescence excitation

KW - quantum information processing

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AN - SCOPUS:84862731826

SN - 0935-9648

VL - 24

SP - 3333

EP - 3338

JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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