Near-field optical nanopatterning of crystalline silicon

G. Wysocki; J. Heitz; D. Bäuerle

doi:10.1063/1.1689395

Near-field optical nanopatterning of crystalline silicon

G. Wysocki
, J. Heitz
, D. Bäuerle

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Nanoscale photophysical and photochemical etching of silicon in Cl ₂ environment was investigated. The study was carried out in an optical near-field setup. A 351 nm Ar ⁺ laser light etching resulted in patterns with width corresponding to the diameter of the fiber tip. It was also observed that with 514.5 nm Ar ⁺ laser light, etching took place only at significantly high laser intensities.

Original language	English (US)
Pages (from-to)	2025-2027
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	12
DOIs	https://doi.org/10.1063/1.1689395
State	Published - Mar 22 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1689395

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title = "Near-field optical nanopatterning of crystalline silicon",

abstract = "Nanoscale photophysical and photochemical etching of silicon in Cl 2 environment was investigated. The study was carried out in an optical near-field setup. A 351 nm Ar + laser light etching resulted in patterns with width corresponding to the diameter of the fiber tip. It was also observed that with 514.5 nm Ar + laser light, etching took place only at significantly high laser intensities.",

author = "G. Wysocki and J. Heitz and D. B{\"a}uerle",

year = "2004",

month = mar,

day = "22",

doi = "10.1063/1.1689395",

language = "English (US)",

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pages = "2025--2027",

journal = "Applied Physics Letters",

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T1 - Near-field optical nanopatterning of crystalline silicon

AU - Wysocki, G.

AU - Heitz, J.

AU - Bäuerle, D.

PY - 2004/3/22

Y1 - 2004/3/22

N2 - Nanoscale photophysical and photochemical etching of silicon in Cl 2 environment was investigated. The study was carried out in an optical near-field setup. A 351 nm Ar + laser light etching resulted in patterns with width corresponding to the diameter of the fiber tip. It was also observed that with 514.5 nm Ar + laser light, etching took place only at significantly high laser intensities.

AB - Nanoscale photophysical and photochemical etching of silicon in Cl 2 environment was investigated. The study was carried out in an optical near-field setup. A 351 nm Ar + laser light etching resulted in patterns with width corresponding to the diameter of the fiber tip. It was also observed that with 514.5 nm Ar + laser light, etching took place only at significantly high laser intensities.

UR - https://www.scopus.com/pages/publications/1942509405

UR - https://www.scopus.com/pages/publications/1942509405#tab=citedBy

U2 - 10.1063/1.1689395

DO - 10.1063/1.1689395

M3 - Article

AN - SCOPUS:1942509405

SN - 0003-6951

VL - 84

SP - 2025

EP - 2027

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Near-field optical nanopatterning of crystalline silicon

Abstract

All Science Journal Classification (ASJC) codes

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