Near-field optical nanopatterning of crystalline silicon

G. Wysocki, J. Heitz, D. Bäuerle

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

Nanoscale photophysical and photochemical etching of silicon in Cl 2 environment was investigated. The study was carried out in an optical near-field setup. A 351 nm Ar + laser light etching resulted in patterns with width corresponding to the diameter of the fiber tip. It was also observed that with 514.5 nm Ar + laser light, etching took place only at significantly high laser intensities.

Original languageEnglish (US)
Pages (from-to)2025-2027
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
StatePublished - Mar 22 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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