Abstract
Nanoscale photophysical and photochemical etching of silicon in Cl 2 environment was investigated. The study was carried out in an optical near-field setup. A 351 nm Ar + laser light etching resulted in patterns with width corresponding to the diameter of the fiber tip. It was also observed that with 514.5 nm Ar + laser light, etching took place only at significantly high laser intensities.
Original language | English (US) |
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Pages (from-to) | 2025-2027 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 12 |
DOIs | |
State | Published - Mar 22 2004 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)