Nanoscale photophysical and photochemical etching of silicon in Cl 2 environment was investigated. The study was carried out in an optical near-field setup. A 351 nm Ar + laser light etching resulted in patterns with width corresponding to the diameter of the fiber tip. It was also observed that with 514.5 nm Ar + laser light, etching took place only at significantly high laser intensities.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)