Abstract
We review our work on high-frequency conductance in two-dimensional high-mobility electronic systems in wide n-AlGaAs/GaAs/AlGaAs quantum wells. Using simultaneous measurements of the attenuation and velocity of a surface acoustic wave we obtained both real and imaginary components of the complex high-frequency conductance. Based on the experimental results and their analysis we conclude that close to the filling factor v=1/5, as well as in the interval 0.18>v>0.125, a Wigner crystal pinned by disorder is formed. Both the melting temperature and the correlation length of the pinning-induced domains in the Wigner crystal were found. In close vicinities of v=1 and 2, transitions from single-electron localization to a Wigner crystal were observed.
Original language | English (US) |
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Pages (from-to) | 86-94 |
Number of pages | 9 |
Journal | Low Temperature Physics |
Volume | 43 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2017 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)