Nanostructures in GaAs fabricated by molecular beam epitaxy

Loren N. Pfeiffer; Kenneth W. West; Robert L. Willett; Hidefumi Akiyama; Leonid P. Rokhinson

doi:10.1002/bltj.20110

Nanostructures in GaAs fabricated by molecular beam epitaxy

Loren N. Pfeiffer, Kenneth W. West, Robert L. Willett, Hidefumi Akiyama, Leonid P. Rokhinson

Research output: Contribution to journal › Review article › peer-review

8 Scopus citations

Abstract

We review three novel techniques whereby the highly uniform two-dimensional films produced by molecular beam epitaxy (MBE) can be further patterned into nanowires or nanostructures having quantum confinement in all three dimensions. These techniques have the potential of greatly extending the power and utility of the MBE method.

Original language	English (US)
Pages (from-to)	151-159
Number of pages	9
Journal	Bell System Technical Journal
Volume	10
Issue number	3
DOIs	https://doi.org/10.1002/bltj.20110
State	Published - 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Engineering

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10.1002/bltj.20110

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title = "Nanostructures in GaAs fabricated by molecular beam epitaxy",

abstract = "We review three novel techniques whereby the highly uniform two-dimensional films produced by molecular beam epitaxy (MBE) can be further patterned into nanowires or nanostructures having quantum confinement in all three dimensions. These techniques have the potential of greatly extending the power and utility of the MBE method.",

author = "Pfeiffer, {Loren N.} and West, {Kenneth W.} and Willett, {Robert L.} and Hidefumi Akiyama and Rokhinson, {Leonid P.}",

year = "2005",

doi = "10.1002/bltj.20110",

language = "English (US)",

volume = "10",

pages = "151--159",

journal = "Bell System Technical Journal",

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publisher = "Lucent Technologies",

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T1 - Nanostructures in GaAs fabricated by molecular beam epitaxy

AU - Pfeiffer, Loren N.

AU - West, Kenneth W.

AU - Willett, Robert L.

AU - Akiyama, Hidefumi

AU - Rokhinson, Leonid P.

PY - 2005

Y1 - 2005

N2 - We review three novel techniques whereby the highly uniform two-dimensional films produced by molecular beam epitaxy (MBE) can be further patterned into nanowires or nanostructures having quantum confinement in all three dimensions. These techniques have the potential of greatly extending the power and utility of the MBE method.

AB - We review three novel techniques whereby the highly uniform two-dimensional films produced by molecular beam epitaxy (MBE) can be further patterned into nanowires or nanostructures having quantum confinement in all three dimensions. These techniques have the potential of greatly extending the power and utility of the MBE method.

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U2 - 10.1002/bltj.20110

DO - 10.1002/bltj.20110

M3 - Review article

AN - SCOPUS:33645508491

SN - 0005-8580

VL - 10

SP - 151

EP - 159

JO - Bell System Technical Journal

JF - Bell System Technical Journal

IS - 3

ER -

Nanostructures in GaAs fabricated by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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