Nanoscale sub-picosecond metal-semiconductor-metal photodetectors

S. Y. Chou, M. Y. Liu, P. B. Fischer, T. Y. Hsiang, S. Alexandrou, R. Sobolewski

Research output: Contribution to conferencePaper

Abstract

Metal-semiconductor-metal photodetectors (MSM PDs) with finger spacing and width as small as 25 nm have been fabricated using high-resolution electron beam lithography on low-temperature-grown GaAs, bulk GaAs, and bulk Si. Measurement using an electro-optic sampling system showed that the fastest MSM PDs had finger spacing and width, full width at half maximum response time, and 3-dB bandwidth, respectively, of 300 nm, 0.87 ps, and 0.51 THz for LT-GaAs; 100 nm, 1.5 ps, and 0.3 THz for bulk GaAs; and 100 nm, 10.7 ps, and 41 GHz for crystalline Si. To our knowledge, they are the smallest and fastest MSM PDs ever reported. Monte Carlo simulation of detector response time is studied and compared with experimental data. Detector parasitic capacitance and resistance and their effects to the detector's speed are studied. Finally, scaling rules for high-speed MSM PDs are proposed.

Original languageEnglish (US)
Pages217-219
Number of pages3
StatePublished - Dec 1 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chou, S. Y., Liu, M. Y., Fischer, P. B., Hsiang, T. Y., Alexandrou, S., & Sobolewski, R. (1992). Nanoscale sub-picosecond metal-semiconductor-metal photodetectors. 217-219. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .