Nanoscale silicon field effect transistors fabricated using imprint lithoqraphy

Lingjie Guo, Peter R. Krauss, Stephen Y. Chou

Research output: Contribution to journalArticlepeer-review

133 Scopus citations


We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, including 100 nm wire channels, 250-nm-diam quantum dots, and ring structures with 100 nm ring width, over a 2×2 cm lithography field with good uniformity. Compared with devices fabricated by the conventional electron-beam lithography, we did not observe any degradation in the device characteristics. The successful fabrication of the semiconductor nanodevices represents a step forward to make nanoimprint lithography a viable technique for the mass production of semiconductor devices.

Original languageEnglish (US)
Pages (from-to)1881-1883
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - Sep 29 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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