TY - GEN
T1 - Nanoscale organic electronic devices formed by lamination with stamps
AU - Zaumseil, Jana
AU - Someya, Takao
AU - Bao, Zhenan
AU - Loo, Yueh Lin
AU - Baldwin, Kirk
AU - Cirelli, Raymond
AU - Rogers, John A.
N1 - Funding Information:
Acknowledgements. We would like to thank Patricia Scanlon and Philip Kelly for their supports during the dataset capture. This work is co-funded by Bell Labs Ireland and the Irish Research Council under the Enterprise Partnership scheme. The research that lead to this paper was also supported in part by the European Commission under the Contract FP7-ICT-287723 REVERIE.
PY - 2002
Y1 - 2002
N2 - Lamination of metal-coated elastomeric stamps against thin films of electroactive organics provides non-invasive, high resolution electrical contacts for investigations of charge transport in these materials. This approach uses the features of relief on the stamps to define, with nanometer resolution, the geometry and separation of electrodes that are formed by uniform evaporation of a thin metal film onto the stamp. Soft, room temperature contact of an element of this type with an organic semiconductor film on a gate dielectric and a gate yields a high performance top contact transistor with source/drain electrodes supported by the stamp. We review here our use of this approach to study the electrical properties of the organic semiconductor pentacene in thin film transistors structures. We also introduce a method for using the same techniques and structures to probe transport through organic monolayers.
AB - Lamination of metal-coated elastomeric stamps against thin films of electroactive organics provides non-invasive, high resolution electrical contacts for investigations of charge transport in these materials. This approach uses the features of relief on the stamps to define, with nanometer resolution, the geometry and separation of electrodes that are formed by uniform evaporation of a thin metal film onto the stamp. Soft, room temperature contact of an element of this type with an organic semiconductor film on a gate dielectric and a gate yields a high performance top contact transistor with source/drain electrodes supported by the stamp. We review here our use of this approach to study the electrical properties of the organic semiconductor pentacene in thin film transistors structures. We also introduce a method for using the same techniques and structures to probe transport through organic monolayers.
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U2 - 10.1557/proc-761-f5.4
DO - 10.1557/proc-761-f5.4
M3 - Conference contribution
AN - SCOPUS:34249894741
SN - 1558996982
SN - 9781558996984
T3 - Materials Research Society Symposium Proceedings
SP - 53
EP - 58
BT - Molecular Electronics
PB - Materials Research Society
T2 - 2002 MRS Fall Meeting
Y2 - 2 December 2002 through 6 December 2002
ER -