Nanoscale measurements of electronic properties in organic thin film transistors

Oren Tal; Yossi Rosenwaks; Yohai Roichman; Nir Tessler; Calvin K. Chan; Antoine Kahn

doi:10.1557/proc-871-i4.5

Nanoscale measurements of electronic properties in organic thin film transistors

Oren Tal, Yossi Rosenwaks, Yohai Roichman, Nir Tessler, Calvin K. Chan, Antoine Kahn

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Kelvin probe force microscopy was used for extraction of the threshold and the pinch off voltages in organic thin film transistors. The first was determined by direct detection of the charge accumulation onset and the latter by a direct observation of the pinch off region formation. In addition, an effective threshold voltage shift can be extracted from the pinch-off voltage as a function of charge concentration. The dependence of the effective threshold voltage on the gate voltage must be considered when calculating charge carrier concentrations in organic thin film transistors.

Original language	English (US)
Title of host publication	Organic Thin-Film Electronics
Publisher	Materials Research Society
Pages	126-131
Number of pages	6
ISBN (Print)	155899825X, 9781558998254
DOIs	https://doi.org/10.1557/proc-871-i4.5
State	Published - 2005
Event	2005 MRS Spring Meeting - San Francisco, CA, United States Duration: Mar 28 2005 → Apr 1 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	871
ISSN (Print)	0272-9172

Other

Other	2005 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	3/28/05 → 4/1/05

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-871-i4.5

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title = "Nanoscale measurements of electronic properties in organic thin film transistors",

abstract = "Kelvin probe force microscopy was used for extraction of the threshold and the pinch off voltages in organic thin film transistors. The first was determined by direct detection of the charge accumulation onset and the latter by a direct observation of the pinch off region formation. In addition, an effective threshold voltage shift can be extracted from the pinch-off voltage as a function of charge concentration. The dependence of the effective threshold voltage on the gate voltage must be considered when calculating charge carrier concentrations in organic thin film transistors.",

author = "Oren Tal and Yossi Rosenwaks and Yohai Roichman and Nir Tessler and Chan, {Calvin K.} and Antoine Kahn",

year = "2005",

doi = "10.1557/proc-871-i4.5",

language = "English (US)",

isbn = "155899825X",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "126--131",

booktitle = "Organic Thin-Film Electronics",

address = "United States",

note = "2005 MRS Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

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Tal, O, Rosenwaks, Y, Roichman, Y, Tessler, N, Chan, CK & Kahn, A 2005, Nanoscale measurements of electronic properties in organic thin film transistors. in Organic Thin-Film Electronics. Materials Research Society Symposium Proceedings, vol. 871, Materials Research Society, pp. 126-131, 2005 MRS Spring Meeting, San Francisco, CA, United States, 3/28/05. https://doi.org/10.1557/proc-871-i4.5

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T1 - Nanoscale measurements of electronic properties in organic thin film transistors

AU - Tal, Oren

AU - Rosenwaks, Yossi

AU - Roichman, Yohai

AU - Tessler, Nir

AU - Chan, Calvin K.

AU - Kahn, Antoine

PY - 2005

Y1 - 2005

N2 - Kelvin probe force microscopy was used for extraction of the threshold and the pinch off voltages in organic thin film transistors. The first was determined by direct detection of the charge accumulation onset and the latter by a direct observation of the pinch off region formation. In addition, an effective threshold voltage shift can be extracted from the pinch-off voltage as a function of charge concentration. The dependence of the effective threshold voltage on the gate voltage must be considered when calculating charge carrier concentrations in organic thin film transistors.

AB - Kelvin probe force microscopy was used for extraction of the threshold and the pinch off voltages in organic thin film transistors. The first was determined by direct detection of the charge accumulation onset and the latter by a direct observation of the pinch off region formation. In addition, an effective threshold voltage shift can be extracted from the pinch-off voltage as a function of charge concentration. The dependence of the effective threshold voltage on the gate voltage must be considered when calculating charge carrier concentrations in organic thin film transistors.

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U2 - 10.1557/proc-871-i4.5

DO - 10.1557/proc-871-i4.5

M3 - Conference contribution

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SN - 155899825X

SN - 9781558998254

T3 - Materials Research Society Symposium Proceedings

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EP - 131

BT - Organic Thin-Film Electronics

PB - Materials Research Society

T2 - 2005 MRS Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

Nanoscale measurements of electronic properties in organic thin film transistors

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