Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Zhaoning Yu; Steven J. Schablitsky; S. Y. Chou

doi:10.1063/1.123858

Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Zhaoning Yu
, Steven J. Schablitsky
, S. Y. Chou

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.

Original language	English (US)
Pages (from-to)	2381-2383
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	16
DOIs	https://doi.org/10.1063/1.123858
State	Published - Apr 19 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123858

Cite this

@article{1a2537692b244028a0654db683b2fd78,

title = "Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography",

abstract = "Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.",

author = "Zhaoning Yu and Schablitsky, \{Steven J.\} and Chou, \{S. Y.\}",

year = "1999",

month = apr,

day = "19",

doi = "10.1063/1.123858",

language = "English (US)",

volume = "74",

pages = "2381--2383",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

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T1 - Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

AU - Yu, Zhaoning

AU - Schablitsky, Steven J.

AU - Chou, S. Y.

PY - 1999/4/19

Y1 - 1999/4/19

N2 - Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.

AB - Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.

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UR - https://www.scopus.com/pages/publications/0032620446#tab=citedBy

U2 - 10.1063/1.123858

DO - 10.1063/1.123858

M3 - Article

AN - SCOPUS:0032620446

SN - 0003-6951

VL - 74

SP - 2381

EP - 2383

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Abstract

All Science Journal Classification (ASJC) codes

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