Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Zhaoning Yu, Steven J. Schablitsky, S. Y. Chou

Research output: Contribution to journalArticle

52 Scopus citations

Abstract

Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.

Original languageEnglish (US)
Pages (from-to)2381-2383
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number16
DOIs
StatePublished - Apr 19 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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