Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Zhaoning Yu; Steven J. Schablitsky; S. Y. Chou

doi:10.1063/1.123858

Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Zhaoning Yu, Steven J. Schablitsky, S. Y. Chou

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.

Original language	English (US)
Pages (from-to)	2381-2383
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	16
DOIs	https://doi.org/10.1063/1.123858
State	Published - Apr 19 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.123858

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title = "Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography",

abstract = "Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.",

author = "Zhaoning Yu and Schablitsky, {Steven J.} and Chou, {S. Y.}",

year = "1999",

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language = "English (US)",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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AU - Yu, Zhaoning

AU - Schablitsky, Steven J.

AU - Chou, S. Y.

PY - 1999/4/19

Y1 - 1999/4/19

N2 - Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.

AB - Nanoscale and micrometer-scale GaAs metal-semiconductor-metal photodetectors (MSM-PD) are fabricated and characterized using nanoimprint technology (NIL). MSM-PDs fabricated with NIL are compared with MSM-PDs prepared with electron beam lithography and photolithography. The effects of imprinting conditions on MSM-PD characteristics are analyzed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimprint lithography

Abstract

All Science Journal Classification (ASJC) codes

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