Nanopatterning of Si/SiGe two-dimensional hole gases by PFOTS-aided AFM lithography of carrier supply layer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The nanopatterning of Si/SiGe layers by PFOTS (perfluorooctyl trichlorosilane) -aided AFM (atomic force microscopy) lithography is demonstrated. We use self-assembled PFOTS monolayers as a resist for AFM exposure and then transfer patterns in to underlying SiGe layers by a two-step selective wet etching. Minimum linewidths of 100nm can be achieved with improved uniformity and repeatability compared to AFM lithography without PFOTS. This lithography technique was used to pattern the carrier supply layer in Si/SiGe 2-D hole gases to localize holes for epitaxially passivated quantum dot applications.

Original languageEnglish (US)
Title of host publicationNanomanufacturing
PublisherMaterials Research Society
Pages42-47
Number of pages6
ISBN (Print)1558998780, 9781558998780
DOIs
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 17 2006Apr 21 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume921
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/17/064/21/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Yao, K., & Sturm, J. C. (2006). Nanopatterning of Si/SiGe two-dimensional hole gases by PFOTS-aided AFM lithography of carrier supply layer. In Nanomanufacturing (pp. 42-47). (Materials Research Society Symposium Proceedings; Vol. 921). Materials Research Society. https://doi.org/10.1557/proc-0921-t02-08