@inproceedings{d3ed14d6fa1c4384ad68a350fca76e68,
title = "Nanopatterning of Si/SiGe two-dimensional hole gases by PFOTS-aided AFM lithography of carrier supply layer",
abstract = "The nanopatterning of Si/SiGe layers by PFOTS (perfluorooctyl trichlorosilane) -aided AFM (atomic force microscopy) lithography is demonstrated. We use self-assembled PFOTS monolayers as a resist for AFM exposure and then transfer patterns in to underlying SiGe layers by a two-step selective wet etching. Minimum linewidths of 100nm can be achieved with improved uniformity and repeatability compared to AFM lithography without PFOTS. This lithography technique was used to pattern the carrier supply layer in Si/SiGe 2-D hole gases to localize holes for epitaxially passivated quantum dot applications.",
author = "Kun Yao and Sturm, {James C.}",
year = "2006",
doi = "10.1557/proc-0921-t02-08",
language = "English (US)",
isbn = "1558998780",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "42--47",
booktitle = "Nanomanufacturing",
address = "United States",
note = "2006 MRS Spring Meeting ; Conference date: 17-04-2006 Through 21-04-2006",
}