Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

Xiang Zheng Bo, Leonid P. Rokhinson, Haizhou Yin, D. C. Tsui, J. C. Sturm

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

Two nanopatterning methods for silicon/silicon-germanium (Si/SiGe) heterostructures are demonstrated: (1) direct atomic force microscopy (AFM) oxidation on SiGe layers and (2) AFM oxidation on silicon followed by selective wet etching of SiGe. When directly oxidizing SiGe alloys, minimum linewidths of 20 nm were achieved by adjusting the bias voltage of the AFM tip. By AFM oxidation and selective wet etching, a 10-nm-thick conducting SiGe layer was patterned to form features under ∼50 nm. Fabricated SiGe quantum dots with side gates exhibited Coulomb blockade oscillation.

Original languageEnglish (US)
Pages (from-to)3263-3265
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number17
DOIs
StatePublished - Oct 21 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation'. Together they form a unique fingerprint.

  • Cite this