Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

Xiang Zheng Bo; Leonid P. Rokhinson; Haizhou Yin; D. C. Tsui; J. C. Sturm

doi:10.1063/1.1515113

Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

Xiang Zheng Bo, Leonid P. Rokhinson, Haizhou Yin, D. C. Tsui, J. C. Sturm

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33 Scopus citations

Abstract

Two nanopatterning methods for silicon/silicon-germanium (Si/SiGe) heterostructures are demonstrated: (1) direct atomic force microscopy (AFM) oxidation on SiGe layers and (2) AFM oxidation on silicon followed by selective wet etching of SiGe. When directly oxidizing SiGe alloys, minimum linewidths of 20 nm were achieved by adjusting the bias voltage of the AFM tip. By AFM oxidation and selective wet etching, a 10-nm-thick conducting SiGe layer was patterned to form features under ∼50 nm. Fabricated SiGe quantum dots with side gates exhibited Coulomb blockade oscillation.

Original language	English (US)
Pages (from-to)	3263-3265
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	17
DOIs	https://doi.org/10.1063/1.1515113
State	Published - Oct 21 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1515113

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abstract = "Two nanopatterning methods for silicon/silicon-germanium (Si/SiGe) heterostructures are demonstrated: (1) direct atomic force microscopy (AFM) oxidation on SiGe layers and (2) AFM oxidation on silicon followed by selective wet etching of SiGe. When directly oxidizing SiGe alloys, minimum linewidths of 20 nm were achieved by adjusting the bias voltage of the AFM tip. By AFM oxidation and selective wet etching, a 10-nm-thick conducting SiGe layer was patterned to form features under ∼50 nm. Fabricated SiGe quantum dots with side gates exhibited Coulomb blockade oscillation.",

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AU - Bo, Xiang Zheng

AU - Rokhinson, Leonid P.

AU - Yin, Haizhou

AU - Tsui, D. C.

AU - Sturm, J. C.

PY - 2002/10/21

Y1 - 2002/10/21

N2 - Two nanopatterning methods for silicon/silicon-germanium (Si/SiGe) heterostructures are demonstrated: (1) direct atomic force microscopy (AFM) oxidation on SiGe layers and (2) AFM oxidation on silicon followed by selective wet etching of SiGe. When directly oxidizing SiGe alloys, minimum linewidths of 20 nm were achieved by adjusting the bias voltage of the AFM tip. By AFM oxidation and selective wet etching, a 10-nm-thick conducting SiGe layer was patterned to form features under ∼50 nm. Fabricated SiGe quantum dots with side gates exhibited Coulomb blockade oscillation.

AB - Two nanopatterning methods for silicon/silicon-germanium (Si/SiGe) heterostructures are demonstrated: (1) direct atomic force microscopy (AFM) oxidation on SiGe layers and (2) AFM oxidation on silicon followed by selective wet etching of SiGe. When directly oxidizing SiGe alloys, minimum linewidths of 20 nm were achieved by adjusting the bias voltage of the AFM tip. By AFM oxidation and selective wet etching, a 10-nm-thick conducting SiGe layer was patterned to form features under ∼50 nm. Fabricated SiGe quantum dots with side gates exhibited Coulomb blockade oscillation.

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Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation

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