Abstract
Semiconductor lasers with low lasing thresholds (Pth = 0.2 μJ/cm2) is presented. The devices consist of an organic double-heterostructure waveguide with a distributed optical feedback provided by the 1st order optical grating fabricated by nanoimprinting. Using these results to estimate lasing thresholds in electrically pumped organic lasers, a value of 40 A/cm2 for a threshold current density is inferred, which is practical within the current range of organic diode structures. The main obstacle in realization of these devices is related to induced absorption formed in organic films under electrical excitation. The induced absorption effects found in the study of single layer DFB organic lasers under pulsed and quasi-cw optical excitations are reported.
Original language | English (US) |
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Pages | 70-71 |
Number of pages | 2 |
State | Published - 1999 |
Event | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA Duration: Jun 28 1999 → Jun 30 1999 |
Other
Other | Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC) |
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City | Santa Barbara, CA, USA |
Period | 6/28/99 → 6/30/99 |
All Science Journal Classification (ASJC) codes
- General Engineering