Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

K. F. Eid; B. L. Sheu; O. Maksimov; M. B. Stone; P. Schiffer; N. Samarth

doi:10.1063/1.1900938

Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

K. F. Eid, B. L. Sheu, O. Maksimov, M. B. Stone, P. Schiffer, N. Samarth

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.

Original language	English (US)
Article number	152505
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1900938
State	Published - 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1900938

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title = "Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures",

abstract = "We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.",

author = "Eid, {K. F.} and Sheu, {B. L.} and O. Maksimov and Stone, {M. B.} and P. Schiffer and N. Samarth",

note = "Funding Information: This research has been supported by Grant Nos. ONR N0014-05-1-0107, DARPA∕ONR N00014-99-1093, -00-1-0951, University of California-Santa Barbara Subcontract KK4131, and NSF DMR-0305238 and -0401486. This work was performed in part at the Penn State Nanofabrication Facility, a member of the NSF National Nanofabrication Users Network.",

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T1 - Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

AU - Eid, K. F.

AU - Sheu, B. L.

AU - Maksimov, O.

AU - Stone, M. B.

AU - Schiffer, P.

AU - Samarth, N.

N1 - Funding Information: This research has been supported by Grant Nos. ONR N0014-05-1-0107, DARPA∕ONR N00014-99-1093, -00-1-0951, University of California-Santa Barbara Subcontract KK4131, and NSF DMR-0305238 and -0401486. This work was performed in part at the Penn State Nanofabrication Facility, a member of the NSF National Nanofabrication Users Network.

PY - 2005

Y1 - 2005

N2 - We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.

AB - We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)As layers and thus allows the removal of Mn interstitials using annealing. This leads to an enhanced Curie temperature and reduced resistivity compared to unpatterned samples. For a fixed annealing time, the enhancement of the Curie temperature is larger for narrower nanowires.

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Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

Abstract

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