TY - GEN
T1 - Nanocrystalline silicon thin film transistors on optically clear polymer foil substrates
AU - Kattamis, Alex
AU - Cheng, I. Chun
AU - Long, Ke
AU - Sturm, James C.
AU - Wagner, Sigurd
N1 - Funding Information:
This work was funded by NASA under contract NAS8-38252 to Pennsylvania State University, contract NAS8-39073 to CfA, and Chandra grant G01-2052X to Rutgers University.
PY - 2005
Y1 - 2005
N2 - We have fabricated TFTs of nanocrystalline silicon (nc-Si) at 150°C on clear polymer substrates (coefficients of thermal expansion, α∼45 to 55ppm/K), on Kapton® 200E (α=17ppm/K), and on Corning 1737 glass (α=3ppm/K) for comparison. Because thermally stable polymers, such as Kapton® 200E polyimide, have glass transition temperatures as high as 325°C, they are candidates for direct substitution of display glass. The stresses developed in the substrate and device layers, due to a, are reduced by decreasing the thickness of the active layers, by cutting the layers into islands separated by exposed substrate, and by designing stresses, via plasma conditions, into the SiNx passivating layers. By using these three techniques we have made nc-Si TFTs on high Tg, and high a, clear polymer foils with electron mobilities of up to 18cm2/Vs. When integrated with bottom-emitting organic light emitting diodes, such devices will allow for a 10x reduction in pixel TFT areas, compared to TFTs of amorphous silicon.
AB - We have fabricated TFTs of nanocrystalline silicon (nc-Si) at 150°C on clear polymer substrates (coefficients of thermal expansion, α∼45 to 55ppm/K), on Kapton® 200E (α=17ppm/K), and on Corning 1737 glass (α=3ppm/K) for comparison. Because thermally stable polymers, such as Kapton® 200E polyimide, have glass transition temperatures as high as 325°C, they are candidates for direct substitution of display glass. The stresses developed in the substrate and device layers, due to a, are reduced by decreasing the thickness of the active layers, by cutting the layers into islands separated by exposed substrate, and by designing stresses, via plasma conditions, into the SiNx passivating layers. By using these three techniques we have made nc-Si TFTs on high Tg, and high a, clear polymer foils with electron mobilities of up to 18cm2/Vs. When integrated with bottom-emitting organic light emitting diodes, such devices will allow for a 10x reduction in pixel TFT areas, compared to TFTs of amorphous silicon.
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U2 - 10.1557/proc-870-h2.7
DO - 10.1557/proc-870-h2.7
M3 - Conference contribution
AN - SCOPUS:34249950204
SN - 1558998241
SN - 9781558998247
T3 - Materials Research Society Symposium Proceedings
SP - 55
EP - 60
BT - Giant-Area Electronics on Nonconventional Substrates
PB - Materials Research Society
T2 - 2005 MRS Spring Meeting
Y2 - 28 March 2005 through 1 April 2005
ER -