Nanocrystalline silicon: From disordered insulator to dirty metal

M. Taguchi; Y. Tsutsumi; R. N. Bhatt; S. Wagner

doi:10.4028/www.scientific.net/ssp.51-52.237

Nanocrystalline silicon: From disordered insulator to dirty metal

M. Taguchi
, Y. Tsutsumi
, R. N. Bhatt
, S. Wagner

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF₄) and hydrogen (H₂) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×10¹⁹cm^-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T^1/2 at temperatures below 270K.

Original language	English (US)
Pages (from-to)	237-242
Number of pages	6
Journal	Solid State Phenomena
Volume	51-52
DOIs	https://doi.org/10.4028/www.scientific.net/ssp.51-52.237
State	Published - 1996

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
General Materials Science
Condensed Matter Physics

Keywords

Electronic conductivity
Hall effect
Metal-insulator transition
Nanocrystalline silicon
Raman spectra

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10.4028/www.scientific.net/ssp.51-52.237

Cite this

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title = "Nanocrystalline silicon: From disordered insulator to dirty metal",

abstract = "We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.",

keywords = "Electronic conductivity, Hall effect, Metal-insulator transition, Nanocrystalline silicon, Raman spectra",

author = "M. Taguchi and Y. Tsutsumi and Bhatt, \{R. N.\} and S. Wagner",

note = "Funding Information: This work is supported in part by the Electric Power Research Institute and by the New Energy and Industrial Technology Development Organization (NEDO/MITI) and ARPA. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "1996",

doi = "10.4028/www.scientific.net/ssp.51-52.237",

language = "English (US)",

volume = "51-52",

pages = "237--242",

journal = "Solid State Phenomena",

issn = "1012-0394",

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TY - JOUR

T1 - Nanocrystalline silicon

T2 - From disordered insulator to dirty metal

AU - Taguchi, M.

AU - Tsutsumi, Y.

AU - Bhatt, R. N.

AU - Wagner, S.

N1 - Funding Information: This work is supported in part by the Electric Power Research Institute and by the New Energy and Industrial Technology Development Organization (NEDO/MITI) and ARPA. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 1996

Y1 - 1996

N2 - We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.

AB - We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.

KW - Electronic conductivity

KW - Hall effect

KW - Metal-insulator transition

KW - Nanocrystalline silicon

KW - Raman spectra

UR - https://www.scopus.com/pages/publications/17544373610

UR - https://www.scopus.com/pages/publications/17544373610#tab=citedBy

U2 - 10.4028/www.scientific.net/ssp.51-52.237

DO - 10.4028/www.scientific.net/ssp.51-52.237

M3 - Article

AN - SCOPUS:17544373610

SN - 1012-0394

VL - 51-52

SP - 237

EP - 242

JO - Solid State Phenomena

JF - Solid State Phenomena

ER -

Nanocrystalline silicon: From disordered insulator to dirty metal

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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