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Nanocrystalline silicon - From disordered insulator to dirty metal
Mikio Taguchi
, Yasuo Tsutsumi
,
Ravin N. Bhatt
, Sigurd Wagner
Electrical and Computer Engineering
Physics
Princeton Materials Institute
Research output
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Contribution to journal
›
Article
›
peer-review
4
Scopus citations
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Keyphrases
Insulator
100%
Nanocrystalline Silicon
100%
Temperature Effect
50%
Cm(III)
50%
Electron Density
50%
Room Temperature
50%
Fermi Level
50%
Density of States
50%
Metal-insulator Transition
50%
Electron-electron Interaction
50%
Hopping Conduction
50%
Si Nanocrystals
50%
Material Science
Density
100%
Carrier Concentration
100%
Nanocrystalline
100%
Nanocrystalline Silicon
100%
Physics
Nanocrystalline
100%
Electron Density
50%
Temperature Dependence
50%
Room Temperature
50%
Density of States
50%
Electron Scattering
50%