Nanocrystalline silicon - From disordered insulator to dirty metal

Mikio Taguchi; Yasuo Tsutsumi; Ravin N. Bhatt; Sigurd Wagner

doi:10.1016/0022-3093(96)00079-8

Nanocrystalline silicon - From disordered insulator to dirty metal

Mikio Taguchi
, Yasuo Tsutsumi
, Ravin N. Bhatt
, Sigurd Wagner

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 10¹⁹ cm^-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T^1/2 at temperatures less than 270 K.

Original language	English (US)
Pages (from-to)	899-902
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(96)00079-8
State	Published - May 1996

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(96)00079-8

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@article{da52a34be4f44fc88185fd6a407b3689,

title = "Nanocrystalline silicon - From disordered insulator to dirty metal",

abstract = "Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 1019 cm-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures less than 270 K.",

author = "Mikio Taguchi and Yasuo Tsutsumi and Bhatt, \{Ravin N.\} and Sigurd Wagner",

note = "Funding Information: This work is supported in part by the Electric Power Research Institute and by the New Energy and Industrial Technology Development Organization (NEDO/MITI) and ARPA.",

year = "1996",

month = may,

doi = "10.1016/0022-3093(96)00079-8",

language = "English (US)",

volume = "198-200",

pages = "899--902",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier B.V.",

number = "PART 2",

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TY - JOUR

T1 - Nanocrystalline silicon - From disordered insulator to dirty metal

AU - Taguchi, Mikio

AU - Tsutsumi, Yasuo

AU - Bhatt, Ravin N.

AU - Wagner, Sigurd

N1 - Funding Information: This work is supported in part by the Electric Power Research Institute and by the New Energy and Industrial Technology Development Organization (NEDO/MITI) and ARPA.

PY - 1996/5

Y1 - 1996/5

N2 - Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 1019 cm-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures less than 270 K.

AB - Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 1019 cm-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures less than 270 K.

UR - https://www.scopus.com/pages/publications/0030563388

UR - https://www.scopus.com/pages/publications/0030563388#tab=citedBy

U2 - 10.1016/0022-3093(96)00079-8

DO - 10.1016/0022-3093(96)00079-8

M3 - Article

AN - SCOPUS:0030563388

SN - 0022-3093

VL - 198-200

SP - 899

EP - 902

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Nanocrystalline silicon - From disordered insulator to dirty metal

Abstract

All Science Journal Classification (ASJC) codes

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