Abstract
Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 1019 cm-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures less than 270 K.
Original language | English (US) |
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Pages (from-to) | 899-902 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 198-200 |
Issue number | PART 2 |
DOIs | |
State | Published - May 1996 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry