TY - JOUR
T1 - Nanocrystalline silicon - From disordered insulator to dirty metal
AU - Taguchi, Mikio
AU - Tsutsumi, Yasuo
AU - Bhatt, Ravin N.
AU - Wagner, Sigurd
N1 - Funding Information:
This work is supported in part by the Electric Power Research Institute and by the New Energy and Industrial Technology Development Organization (NEDO/MITI) and ARPA.
PY - 1996/5
Y1 - 1996/5
N2 - Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 1019 cm-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures less than 270 K.
AB - Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 1019 cm-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures less than 270 K.
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U2 - 10.1016/0022-3093(96)00079-8
DO - 10.1016/0022-3093(96)00079-8
M3 - Article
AN - SCOPUS:0030563388
SN - 0022-3093
VL - 198-200
SP - 899
EP - 902
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 2
ER -