Nanocrystalline silicon - From disordered insulator to dirty metal

Mikio Taguchi, Yasuo Tsutsumi, Ravin N. Bhatt, Sigurd Wagner

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Selected results of a study of the metal-insulator transition in n-type nanocrystalline Si:H,F down to T ≈ 30 K are presented. The transition occurs around an electron density of 1 × 1019 cm-3. On the insulator side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures less than 270 K.

Original languageEnglish (US)
Pages (from-to)899-902
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume198-200
Issue numberPART 2
DOIs
StatePublished - May 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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