TY - JOUR
T1 - Nanocrystalline silicon
T2 - From disordered insulator to dirty metal
AU - Taguchi, M.
AU - Tsutsumi, Y.
AU - Bhatt, R. N.
AU - Wagner, S.
N1 - Funding Information:
This work is supported in part by the Electric Power Research Institute and by the New Energy and Industrial Technology Development Organization (NEDO/MITI) and ARPA.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 1996
Y1 - 1996
N2 - We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.
AB - We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.
KW - Electronic conductivity
KW - Hall effect
KW - Metal-insulator transition
KW - Nanocrystalline silicon
KW - Raman spectra
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U2 - 10.4028/www.scientific.net/ssp.51-52.237
DO - 10.4028/www.scientific.net/ssp.51-52.237
M3 - Article
AN - SCOPUS:17544373610
VL - 51-52
SP - 237
EP - 242
JO - Diffusion and Defect Data Pt.B: Solid State Phenomena
JF - Diffusion and Defect Data Pt.B: Solid State Phenomena
SN - 1012-0394
ER -