Abstract
We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.
Original language | English (US) |
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Pages (from-to) | 237-242 |
Number of pages | 6 |
Journal | Solid State Phenomena |
Volume | 51-52 |
DOIs | |
State | Published - Jan 1 1996 |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
Keywords
- Electronic conductivity
- Hall effect
- Metal-insulator transition
- Nanocrystalline silicon
- Raman spectra