Nanocrystalline silicon: From disordered insulator to dirty metal

M. Taguchi; Y. Tsutsumi; R. N. Bhatt; S. Wagner

doi:10.4028/www.scientific.net/ssp.51-52.237

Nanocrystalline silicon: From disordered insulator to dirty metal

M. Taguchi, Y. Tsutsumi, R. N. Bhatt, S. Wagner

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF₄) and hydrogen (H₂) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×10¹⁹cm^-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T^1/2 at temperatures below 270K.

Original language	English (US)
Pages (from-to)	237-242
Number of pages	6
Journal	Solid State Phenomena
Volume	51-52
DOIs	https://doi.org/10.4028/www.scientific.net/ssp.51-52.237
State	Published - Jan 1 1996

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

Keywords

Electronic conductivity
Hall effect
Metal-insulator transition
Nanocrystalline silicon
Raman spectra

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title = "Nanocrystalline silicon: From disordered insulator to dirty metal",

abstract = "We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.",

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AU - Bhatt, R. N.

AU - Wagner, S.

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N2 - We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.

AB - We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.

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KW - Metal-insulator transition

KW - Nanocrystalline silicon

KW - Raman spectra

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