Nanocrystalline silicon: From disordered insulator to dirty metal

M. Taguchi, Y. Tsutsumi, R. N. Bhatt, S. Wagner

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We explored both sides of the metal-insulator transition with four n-type nanocrystalline Si:H,F films. nc-Si:H,F was deposited from silicon tetrafluoride (SiF4) and hydrogen (H2) gases by the PECVD method. The films were characterized down to T=30K. The transition occurs around an electron density of 1×1019cm-3. On the insulating side, hopping conduction in a parabolic density of states near the Fermi level dominates below room temperature. On the metallic side, the conductivity reflects electron-electron interactions, with a temperature dependence of T1/2 at temperatures below 270K.

Original languageEnglish (US)
Pages (from-to)237-242
Number of pages6
JournalSolid State Phenomena
Volume51-52
DOIs
StatePublished - Jan 1 1996

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • Electronic conductivity
  • Hall effect
  • Metal-insulator transition
  • Nanocrystalline silicon
  • Raman spectra

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