TY - JOUR
T1 - N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene
AU - Chan, Calvin K.
AU - Amy, Fabrice
AU - Zhang, Qing
AU - Barlow, Stephen
AU - Marder, Seth
AU - Kahn, Antoine
N1 - Funding Information:
Support of this work by the National Science Foundation (DMR-0408589) and the Princeton MRSEC of the National Science Foundation (DMR-0213706) is gratefully acknowledged. Work at the Georgia Institute of Technology was supported by the National Science Foundation (CHE-0211419 and the STC Program under Agreement Number DMR-0120967), Lintec Corporation, and by the Office of Naval Research (N00014-04-1-0120).
PY - 2006/11/11
Y1 - 2006/11/11
N2 - N-doping of an electron-transport material, a tris(thieno)hexaazatriphenylene derivative (1), with the strongly reducing molecule bis(cyclopentadienyl)-cobalt(II) (cobaltocene, CoCp2), is investigated using ultra-violet, X-ray, and inverse photoemission spectroscopies, and current-voltage measurements. Condensed CoCp2 films show a 4 eV ionization energy, which is unusually low for vacuum-deposited molecular material and suggests that cobaltocene is promising as a molecular n-dopant. Efficient n-doping of 1 by CoCp2 is confirmed by a 0.56 eV shift of the Fermi level toward the unoccupied states of the host, and by a three orders of magnitude current increase in devices where compound 1 is interfacially doped with cobaltocene.
AB - N-doping of an electron-transport material, a tris(thieno)hexaazatriphenylene derivative (1), with the strongly reducing molecule bis(cyclopentadienyl)-cobalt(II) (cobaltocene, CoCp2), is investigated using ultra-violet, X-ray, and inverse photoemission spectroscopies, and current-voltage measurements. Condensed CoCp2 films show a 4 eV ionization energy, which is unusually low for vacuum-deposited molecular material and suggests that cobaltocene is promising as a molecular n-dopant. Efficient n-doping of 1 by CoCp2 is confirmed by a 0.56 eV shift of the Fermi level toward the unoccupied states of the host, and by a three orders of magnitude current increase in devices where compound 1 is interfacially doped with cobaltocene.
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U2 - 10.1016/j.cplett.2006.09.034
DO - 10.1016/j.cplett.2006.09.034
M3 - Article
AN - SCOPUS:33751005581
SN - 0009-2614
VL - 431
SP - 67
EP - 71
JO - Chemical Physics Letters
JF - Chemical Physics Letters
IS - 1-3
ER -