N-doping of pentacene by decamethylcobaltocene

Calvin K. Chan, Antoine Kahn

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


We demonstrate n-type doping of pentacene with the powerful reducing molecule decamethylcobaltocene (CoCp 2 * ). Characterization of pentacene films deposited in a background pressure of CoCp 2 * by X-ray photoemission spectroscopy and Rutherford backscattering confirm that the concentration of incorporated donor molecules can be controlled to a level as high as 1%. Ultraviolet photoemission spectroscopy show Fermi level (E F) shifts toward unoccupied pentacene states, indicative of an increase in the electron concentration. A 1% donor incorporation level brings E F to 0.6 eV below the pentacene lowest unoccupied molecular orbital. The corresponding electron density of ∼ 1018 cm-3 is confirmed by capacitance-voltage measurements on a metal-pentacene-oxide-silicon structure. The demonstration of n-doping suggests applications of CoCp 2 * to pentacene contacts or channel regions of pentacene OTFTs.

Original languageEnglish (US)
Pages (from-to)7-13
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Issue number1
StatePublished - Apr 2009

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science


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