N-doping of organic electronic materials using air-stable organometallics

  • Song Guo
  • , Sang Bok Kim
  • , Swagat K. Mohapatra
  • , Yabing Qi
  • , Tissa Sajoto
  • , Antoine Kahn
  • , Seth R. Marder
  • , Stephen Barlow

Research output: Contribution to journalArticlepeer-review

173 Scopus citations

Abstract

Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene)ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 10 6 at 4 V.

Original languageEnglish (US)
Pages (from-to)699-703
Number of pages5
JournalAdvanced Materials
Volume24
Issue number5
DOIs
StatePublished - Feb 2 2012

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science

Keywords

  • charge transport
  • doping
  • organic electronics
  • organometallics

Fingerprint

Dive into the research topics of 'N-doping of organic electronic materials using air-stable organometallics'. Together they form a unique fingerprint.

Cite this