N-doping of organic electronic materials using air-stable organometallics

Song Guo, Sang Bok Kim, Swagat K. Mohapatra, Yabing Qi, Tissa Sajoto, Antoine Kahn, Seth R. Marder, Stephen Barlow

Research output: Contribution to journalArticlepeer-review

162 Scopus citations


Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene)ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 10 6 at 4 V.

Original languageEnglish (US)
Pages (from-to)699-703
Number of pages5
JournalAdvanced Materials
Issue number5
StatePublished - Feb 2 2012

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • General Materials Science


  • charge transport
  • doping
  • organic electronics
  • organometallics


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