N-doping of organic electronic materials using air-stable organometallics

Song Guo, Sang Bok Kim, Swagat K. Mohapatra, Yabing Qi, Tissa Sajoto, Antoine Kahn, Seth R. Marder, Stephen Barlow

Research output: Contribution to journalArticle

106 Scopus citations

Abstract

Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene)ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 10 6 at 4 V.

Original languageEnglish (US)
Pages (from-to)699-703
Number of pages5
JournalAdvanced Materials
Volume24
Issue number5
DOIs
StatePublished - Feb 2 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • charge transport
  • doping
  • organic electronics
  • organometallics

Fingerprint Dive into the research topics of 'N-doping of organic electronic materials using air-stable organometallics'. Together they form a unique fingerprint.

  • Cite this

    Guo, S., Kim, S. B., Mohapatra, S. K., Qi, Y., Sajoto, T., Kahn, A., Marder, S. R., & Barlow, S. (2012). N-doping of organic electronic materials using air-stable organometallics. Advanced Materials, 24(5), 699-703. https://doi.org/10.1002/adma.201103238