Multiquantum well structure with an average electron mobility of 4.0×106 cm2/V s

L. N. Pfeiffer; K. W. West; J. P. Eisenstein; K. W. Baldwin; P. Gammel

doi:10.1063/1.107597

Multiquantum well structure with an average electron mobility of 4.0×10⁶ cm²/V s

L. N. Pfeiffer
, K. W. West
, J. P. Eisenstein
, K. W. Baldwin
, P. Gammel

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-Å wide are symmetrically modulation doped using Si δ doping at the center of 3600-Å-wide Al_0.1Ga _0.9As barriers. The low field mobility of each well is 4.0×10⁶ cm/V s at a density of 6.4×10¹⁰ cm^-2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.

Original language	English (US)
Pages (from-to)	1211-1212
Number of pages	2
Journal	Applied Physics Letters
Volume	61
Issue number	10
DOIs	https://doi.org/10.1063/1.107597
State	Published - 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.107597

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title = "Multiquantum well structure with an average electron mobility of 4.0×106 cm2/V s",

abstract = "We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-{\AA} wide are symmetrically modulation doped using Si δ doping at the center of 3600-{\AA}-wide Al0.1Ga 0.9As barriers. The low field mobility of each well is 4.0×106 cm/V s at a density of 6.4×1010 cm-2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.",

author = "Pfeiffer, \{L. N.\} and West, \{K. W.\} and Eisenstein, \{J. P.\} and Baldwin, \{K. W.\} and P. Gammel",

year = "1992",

doi = "10.1063/1.107597",

language = "English (US)",

volume = "61",

pages = "1211--1212",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Multiquantum well structure with an average electron mobility of 4.0×106 cm2/V s

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Eisenstein, J. P.

AU - Baldwin, K. W.

AU - Gammel, P.

PY - 1992

Y1 - 1992

N2 - We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-Å wide are symmetrically modulation doped using Si δ doping at the center of 3600-Å-wide Al0.1Ga 0.9As barriers. The low field mobility of each well is 4.0×106 cm/V s at a density of 6.4×1010 cm-2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.

AB - We report a modulation-doped multiquantum well structure which suppresses the usual ambient light effect associated with modulation doping. Ten GaAs quantum wells 300-Å wide are symmetrically modulation doped using Si δ doping at the center of 3600-Å-wide Al0.1Ga 0.9As barriers. The low field mobility of each well is 4.0×106 cm/V s at a density of 6.4×1010 cm-2 measured at 0.3 K either in the dark, or during, or after, exposure to light. This mobility is an order of magnitude improvement over previous work on multiwells.

UR - https://www.scopus.com/pages/publications/0004506858

UR - https://www.scopus.com/pages/publications/0004506858#tab=citedBy

U2 - 10.1063/1.107597

DO - 10.1063/1.107597

M3 - Article

AN - SCOPUS:0004506858

SN - 0003-6951

VL - 61

SP - 1211

EP - 1212

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Multiquantum well structure with an average electron mobility of 4.0×10⁶ cm²/V s

Abstract

All Science Journal Classification (ASJC) codes

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