Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots

D. Wasserman; Claire F. Gmachl; Stephen Aplin Lyon; E. A. Shaner

doi:10.1063/1.2202824

Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots

D. Wasserman
, Claire F. Gmachl
, Stephen Aplin Lyon
, E. A. Shaner

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Multiple wavelength, anisotropically polarized midinfrared electroluminescence from self-assembled InAs quantum dots grown in AlGaAsGaAs heterostructures has been observed at 77 K. Electrons are injected into excited quantum dot states using a graded AlGaAs injector. Direct tunneling out of the quantum dot excited states is prevented by means of a superlattice electron filter. Two midinfrared peaks are seen in the electrically pumped surface emission spectra of the device. The emission peaks are orthogonally polarized within the growth plane, indicating photon emission from intersublevel electron transitions within anisotropically shaped quantum dots.

Original language	English (US)
Article number	191118
Journal	Applied Physics Letters
Volume	88
Issue number	19
DOIs	https://doi.org/10.1063/1.2202824
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2202824

Cite this

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title = "Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots",

abstract = "Multiple wavelength, anisotropically polarized midinfrared electroluminescence from self-assembled InAs quantum dots grown in AlGaAsGaAs heterostructures has been observed at 77 K. Electrons are injected into excited quantum dot states using a graded AlGaAs injector. Direct tunneling out of the quantum dot excited states is prevented by means of a superlattice electron filter. Two midinfrared peaks are seen in the electrically pumped surface emission spectra of the device. The emission peaks are orthogonally polarized within the growth plane, indicating photon emission from intersublevel electron transitions within anisotropically shaped quantum dots.",

author = "D. Wasserman and Gmachl, \{Claire F.\} and Lyon, \{Stephen Aplin\} and Shaner, \{E. A.\}",

note = "Funding Information: This work was supported in part by the U.S. Army Research Office under Grant No. DAAG55-98-1-0270. One of the authors (D.W.) would like to thank the Princeton Council on Science and Technology for additional funding. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy{\textquoteright}s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.",

year = "2006",

doi = "10.1063/1.2202824",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

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TY - JOUR

T1 - Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots

AU - Wasserman, D.

AU - Gmachl, Claire F.

AU - Lyon, Stephen Aplin

AU - Shaner, E. A.

N1 - Funding Information: This work was supported in part by the U.S. Army Research Office under Grant No. DAAG55-98-1-0270. One of the authors (D.W.) would like to thank the Princeton Council on Science and Technology for additional funding. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy’s National Nuclear Security Administration under Contract No. DE-AC04-94AL85000.

PY - 2006

Y1 - 2006

N2 - Multiple wavelength, anisotropically polarized midinfrared electroluminescence from self-assembled InAs quantum dots grown in AlGaAsGaAs heterostructures has been observed at 77 K. Electrons are injected into excited quantum dot states using a graded AlGaAs injector. Direct tunneling out of the quantum dot excited states is prevented by means of a superlattice electron filter. Two midinfrared peaks are seen in the electrically pumped surface emission spectra of the device. The emission peaks are orthogonally polarized within the growth plane, indicating photon emission from intersublevel electron transitions within anisotropically shaped quantum dots.

AB - Multiple wavelength, anisotropically polarized midinfrared electroluminescence from self-assembled InAs quantum dots grown in AlGaAsGaAs heterostructures has been observed at 77 K. Electrons are injected into excited quantum dot states using a graded AlGaAs injector. Direct tunneling out of the quantum dot excited states is prevented by means of a superlattice electron filter. Two midinfrared peaks are seen in the electrically pumped surface emission spectra of the device. The emission peaks are orthogonally polarized within the growth plane, indicating photon emission from intersublevel electron transitions within anisotropically shaped quantum dots.

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UR - https://www.scopus.com/pages/publications/33646680977#tab=citedBy

U2 - 10.1063/1.2202824

DO - 10.1063/1.2202824

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SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191118

ER -

Multiple wavelength anisotropically polarized mid-infrared emission from InAs quantum dots

Abstract

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