Morphology, chemistry, and band bending at Ag- and In-(100)GaSb interfaces

Y. Chang, D. Mao, A. Kahn, J. J. Bonnet, L. Soonckindt, G. Le Lay

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

In order to extend the comparison of the initial stages of Schottky barrier formation to different surfaces of III-V semiconductors, we present here an investigation with low-energy electron diffraction, Auger electron spectroscopy, and ultraviolet photoemission spectroscopy of In- and Ag-GaSb(100) interfaces at room temperature and after annealing. The initial GaSb surfaces exhibit a (3 x 2) structure. The low-coverage growth of In and Ag is essentially two dimensional. It is followed by substantial islanding (In) especially after annealing. Band bending measurements show no significant movement of the Fermi level from its initial position near the valence band maximum.

Original languageEnglish (US)
Pages (from-to)2349-2354
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume9
Issue number4
DOIs
StatePublished - Jul 1 1991

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Keywords

  • Ag
  • Auger electron spectroscopy
  • Band structure
  • Electron diffraction
  • GaSb
  • Gallium antimonides
  • In
  • Indium
  • Interface structure
  • Photoelectron spectroscopy
  • Silver
  • Ultraviolet radiation

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