Monte Carlo simulations of an impurity-band model for III-V diluted magnetic semiconductors

Malcolm P. Kennett, Mona Berciu, R. N. Bhatt

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Abstract

We report the results of a Monte Carlo study of a model of (III,Mn)V diluted magnetic semiconductors which uses an impurity band description of carriers coupled to localized Mn spins and is applicable for carrier densities below and around the metal-insulator transition. In agreement with mean-field studies, we find a transition to a ferromagnetic phase at low temperatures. We compare our results for the magnetic properties with the mean-field approximation, as well as with experiments, and find favorable qualitative agreement with the latter. The local Mn magnetization below the Curie temperature is found to be spatially inhomogeneous, and strongly correlated with the local carrier charge density at the Mn sites. The model contains fermions and classical spins, and hence we introduce a perturbative Monte Carlo scheme to increase the speed of our simulations.

Original languageEnglish (US)
Article number045207
Pages (from-to)452071-4520716
Number of pages4068646
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume66
Issue number4
DOIs
StatePublished - Jul 15 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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