Abstract
All-optical wavelength conversion in the C-band was demonstrated using a regrowth free monolithically integrated Sagnac interferometer. The device was fabricated in the InGaAsP/InP material system grown by gas source molecular beam epitaxy. Both up conversion and down conversion was demonstrated by the device.
Original language | English (US) |
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Pages (from-to) | 447-448 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 2 |
State | Published - 2002 |
Event | 2002 IEEE/LEOS Annual Meeting Conference Proceedings: 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society - Glasgow, United Kingdom Duration: Nov 10 2002 → Nov 14 2002 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering