@inproceedings{23b3b8b1006743c6be2904d958a9e93c,
title = "Monolayer-fluctuation-free interface formation by the cleaved-edge overgrowth method with growth Interruption for uniform quantum wires and wells",
abstract = "Summary form only given. The T-shaped quantum wires (T-QWRs) have been successfully fabricated by cleaved-edge overgrowth (CEO) and MBE. They showed unique one-dimensional properties. However, the difficulty of this growth method still lies in growth of high-quality GaAs layer on the [110] cleaved surface, which requires low growth temperature around 480-500°C and high As flux. In fact, photoluminescence (PL) linewidths of the [110] quantum wells (QWs) and T-QWRs by CEO have been still broader than that of the conventional [001] QWs. In order to fabricate high-quality T-QWRs, further understanding and improvement of the growth of the GaAs layer on the [110] cleaved edge is required.",
author = "M. Yoshita and H. Akiyama and Pfeiffer, {L. N.} and West, {K. W.}",
note = "Publisher Copyright: {\textcopyright} 2001 Optical Soc. Of America.; Quantum Electronics and Laser Science Conference, QELS 2001 ; Conference date: 06-05-2001 Through 11-05-2001",
year = "2001",
doi = "10.1109/QELS.2001.961796",
language = "English (US)",
series = "Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "21--22",
booktitle = "Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001",
address = "United States",
}