Monolayer-fluctuation-free interface formation by the cleaved-edge overgrowth method with growth Interruption for uniform quantum wires and wells

M. Yoshita, H. Akiyama, L. N. Pfeiffer, K. W. West

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. The T-shaped quantum wires (T-QWRs) have been successfully fabricated by cleaved-edge overgrowth (CEO) and MBE. They showed unique one-dimensional properties. However, the difficulty of this growth method still lies in growth of high-quality GaAs layer on the [110] cleaved surface, which requires low growth temperature around 480-500°C and high As flux. In fact, photoluminescence (PL) linewidths of the [110] quantum wells (QWs) and T-QWRs by CEO have been still broader than that of the conventional [001] QWs. In order to fabricate high-quality T-QWRs, further understanding and improvement of the growth of the GaAs layer on the [110] cleaved edge is required.

Original languageEnglish (US)
Title of host publicationTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages21-22
Number of pages2
ISBN (Electronic)155752663X, 9781557526632
DOIs
StatePublished - 2001
Externally publishedYes
EventQuantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States
Duration: May 6 2001May 11 2001

Publication series

NameTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2001
Country/TerritoryUnited States
CityBaltimore
Period5/6/015/11/01

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Radiation

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