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Molecular Series-Tunneling Junctions
Kung Ching Liao
, Liang Yan Hsu
, Carleen M. Bowers
,
Herschel Rabitz
, George M. Whitesides
Chemistry
Princeton Language and Intelligence (PLI)
Princeton Materials Institute
Research output
:
Contribution to journal
›
Article
›
peer-review
29
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Scopus citations
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Keyphrases
Tunnel Junction
100%
O2C®
100%
Charge Transport
66%
Tunneling
66%
Current Density
66%
Self-assembled Monolayer
66%
Eutectic Gallium-indium (EGaIn)
66%
Ga2O3
66%
Law
33%
Electronic Structure
33%
Carboxylate Group
33%
Highest Occupied Molecular Orbital
33%
Strong Interaction
33%
Attenuation
33%
Overall Rate
33%
Applied Voltage
33%
Quantum Phenomena
33%
Tunneling Barrier
33%
Potential Model
33%
Gallium
33%
Tunneling Current
33%
Tunneling Current Density
33%
Junction-based
33%
Decay Constant
33%
Indium
33%
Electrical Potential
33%
Tunneling Decay
33%
Connected in Series
33%
Eutectic Alloy
33%
Attenuation Factor
33%
Classical Circuits
33%
Chemistry
Current Density
100%
Tunneling Current
66%
Self Assembled Monolayer
66%
Charge Transfer
66%
Electronic State
33%
Highest Occupied Molecular Orbital
33%
Eutectics
33%
Gallium
33%
Indium
33%
Carboxylic Acid
33%
Alloy
33%
Physics
Charge Transfer
100%
Indium
50%
Quantum Phenomena
50%
Energy Levels
50%
Eutectic Alloys
50%
Carboxylic Acid
50%
Decay Constant
50%
Mathematics
Exp
100%
Molecular Orbital
100%
Electronic State
100%
Energy Level
100%
Earth and Planetary Sciences
Current Density
100%
Charge Transfer
66%
Indium
33%
Energy Level
33%
Eutectic Alloys
33%