Molecular level alignment at organic semiconductor-metal interfaces

I. G. Hill, A. Rajagopal, A. Kahn, Y. Hu

Research output: Contribution to journalArticlepeer-review

442 Scopus citations


In order to clarify the electronic structure of metal-molecular semiconductor contacts, we use photoemission spectroscopy to investigate the energetics of interfaces formed by vacuum deposition of four different molecular thin films on various metals. We find that the interface electron and hole barriers are not simply defined by the difference between the work functions of the metals and organic solids. The range of interface Fermi level positions is material dependent and dipole barriers are present at all these interfaces. The results demonstrate the breakdown of the vacuum level alignment rule at interfaces between these organic molecular solids and metals.

Original languageEnglish (US)
Pages (from-to)662-664
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Molecular level alignment at organic semiconductor-metal interfaces'. Together they form a unique fingerprint.

Cite this