Skip to main navigation
Skip to search
Skip to main content
Princeton University Home
Help & FAQ
Home
Profiles
Research units
Facilities
Projects
Research output
Press/Media
Search by expertise, name or affiliation
Molecular dynamics simulations of Si etching by energetic CF
+
3
Cameron F. Abrams
,
David B. Graves
Research output
:
Contribution to journal
›
Article
›
peer-review
100
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'Molecular dynamics simulations of Si etching by energetic CF
+
3
'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Engineering
Computer Simulation
100%
Potential Energy
100%
Energetics
100%
Energy Function
100%
Experimental Result
50%
Ion Implantation
50%
Interatomic Potential
50%
Phenomenological Model
50%
Ion Energy
50%
Product Distribution
50%
Physics
Steady State
100%
Molecular Dynamics
100%
Potential Energy
100%
Energetics
100%
Fluence
50%
Ion Beams
50%
Chemical Engineering
Fluorocarbon
100%
Keyphrases
Si Ions
50%
Ion Beam Etching
50%
Material Science
Silicon Ion
50%