@inproceedings{a00480384ecc4275bdc90e685b54c1da,
title = "Molecular dynamics simulations of nanometer-scale feature etch",
abstract = "Molecular dynamics (MD) simulations have been carried out to examine fundamental etch limitations. Beams of Ar+, Ar+/F and CFx+(x=2,3) with 2 nm diameter cylindrical confinement were utilized to mimic 'perfect' masks for small feature etching in silicon. The holes formed during etch exhibit sidewall damage and passivation as a result of ion-induced mixing. The MD results predict a minimum hole diameter of ∼5 nm after post-etch cleaning of the sidewall.",
author = "V{\'e}gh, {J. J.} and Graves, {D. B.}",
year = "2008",
doi = "10.1063/1.2999971",
language = "English (US)",
isbn = "9780735405752",
series = "AIP Conference Proceedings",
pages = "74--78",
booktitle = "Laser and Plasma Applications in Materials Science - First International Conference on Laser and Plasma Applications in Materials Science",
note = "1st International Conference on Laser and Plasma Applications in Materials Science, LAPAMS 2008 ; Conference date: 23-06-2008 Through 26-06-2008",
}