Molecular dynamics simulations of nanometer-scale feature etch

J. J. Végh, D. B. Graves

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Molecular dynamics (MD) simulations have been carried out to examine fundamental etch limitations. Beams of Ar+, Ar+/F and CFx+(x=2,3) with 2 nm diameter cylindrical confinement were utilized to mimic 'perfect' masks for small feature etching in silicon. The holes formed during etch exhibit sidewall damage and passivation as a result of ion-induced mixing. The MD results predict a minimum hole diameter of ∼5 nm after post-etch cleaning of the sidewall.

Original languageEnglish (US)
Title of host publicationLaser and Plasma Applications in Materials Science - First International Conference on Laser and Plasma Applications in Materials Science
Pages74-78
Number of pages5
DOIs
StatePublished - 2008
Externally publishedYes
Event1st International Conference on Laser and Plasma Applications in Materials Science, LAPAMS 2008 - Algiers, Algeria
Duration: Jun 23 2008Jun 26 2008

Publication series

NameAIP Conference Proceedings
Volume1047
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference1st International Conference on Laser and Plasma Applications in Materials Science, LAPAMS 2008
Country/TerritoryAlgeria
CityAlgiers
Period6/23/086/26/08

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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