Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine

M. E. Barone; T. O. Robinson; D. B. Graves

doi:10.1109/27.491699

Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine

M. E. Barone, T. O. Robinson, D. B. Graves

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23 Scopus citations

Abstract

During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl⁺. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated.

Original language	English (US)
Pages (from-to)	77-78
Number of pages	2
Journal	IEEE Transactions on Plasma Science
Volume	24
Issue number	1
DOIs	https://doi.org/10.1109/27.491699
State	Published - 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Condensed Matter Physics

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title = "Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine",

abstract = "During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated.",

author = "Barone, {M. E.} and Robinson, {T. O.} and Graves, {D. B.}",

year = "1996",

doi = "10.1109/27.491699",

language = "English (US)",

volume = "24",

pages = "77--78",

journal = "IEEE Transactions on Plasma Science",

issn = "0093-3813",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Molecular dynamics simulations of direct reactive ion etching

T2 - surface roughening of silicon by chlorine

AU - Barone, M. E.

AU - Robinson, T. O.

AU - Graves, D. B.

PY - 1996

Y1 - 1996

N2 - During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated.

AB - During plasma etching, surfaces can become roughened because of a variety of mechanisms. One source of roughness is illustrated with molecular dynamics simulations of reactive ion etching of a silicon surface with 25-eV Cl+. The three-dimensional (3-D) image of the chlorinated surface and near-surface region is illustrated.

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DO - 10.1109/27.491699

M3 - Article

AN - SCOPUS:0030082185

SN - 0093-3813

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EP - 78

JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

IS - 1

ER -

Molecular dynamics simulations of direct reactive ion etching: surface roughening of silicon by chlorine

Abstract

All Science Journal Classification (ASJC) codes

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